Progress and prospects of GaN-based LEDs using nanostructures

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1、Chin.Phys.BVol.24,No.6(2015)068506TOPICALREVIEW—III-nitrideoptoelectronicmaterialsanddevicesProgressandprospectsofGaN-basedLEDsusingnanostructures*ZhaoLi-Xia(赵丽霞)†,YuZhi-Guo(于治国),SunBo(孙波),ZhuShi-Chao(朱石超),AnPing-Bo(安平博),YangChao(杨超),LiuLei(刘磊),WangJun-Xi(王军喜),andLiJin-Min(李晋闽)Sem

2、iconductorLightingResearchandDevelopmentCenter,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China(Received15April2015;revisedmanuscriptreceived4May2015;publishedonline20May2015)ProgresswithGaN-basedlightemittingdiodes(LEDs)thatincorporatenanostructuresisreviewe

3、d,especiallythere-centachievementsinourresearchgroup.Nano-patternedsapphiresubstrateshavebeenusedtogrowanAlNtemplatelayerfordeep-ultraviolet(DUV)LEDs.Oneefficientsurfacenano-texturingtechnology,hemisphere-cones-hybridnanostruc-tures,wasemployedtoenhancetheextractionefficiencyofInGaN

4、flip-chipLEDs.HexagonalnanopyramidGaN-basedLEDshavebeenfabricatedandshowelectricallydrivencolormodificationandphosphor-freewhitelightemissionbecauseofthelinearlyincreasedquantumwellwidthandindiumincorporationfromtheshelltothecore.Basedonthenanostruc-tures,wehavealsofabricatedsurface

5、plasmon-enhancednanoporousGaN-basedgreenLEDsusingAAOmembraneasamask.BenefittingfromthestronglateralSPcouplingaswellasgoodelectricalprotectionbyapassivationlayer,theELintensityofanSP-enhancednanoporousLEDwassignificantlyenhancedby380%.Furthermore,nanostructureshavebeenusedforthegrowt

6、hofGaNLEDsonamorphoussubstrates,thefabricationofstretchableLEDs,andforincreasingthe3-dBmodulationbandwidthforvisiblelightcommunication.Keywords:GaN-basedlightemittingdiodes(LEDs),nanostructure,nano-patternedsapphiresubstrate,sur-faceplasmonPACS:85.60.Jb,62.23.St,78.66.Fd,81.07.–bD

7、OI:10.1088/1674-1056/24/6/0685061.IntroductionAlthoughthenativesubstratesareavailablefornitrides,duetothelimitedavailabilityandrelativelyhighcostofsuffi-Galliumnitride(GaN)isanextremelypromisingdirect[1]cientlylargesingleGaNcrystalsforuseassubstrates,mostwidebandgapsemiconductormat

8、erialforoptoelectronics,GaN-based