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1、LamEtcherOverviewTheMicrolaboperatesfiveLamdryetchersthatrepresentthreegenerationsofLamproducts,i.e.Autoetcher,Rainbow,andTCP.Thespecificationtable,attachedattheend,summarizestheimportantprocessandmachineparametersoftheseetchers.Besidesusingdifferentprocessgasestoetchdifferenttargetfilms,there
2、arespecificdesigndifferencesamongtheseetcherstoachievetheprocessrequirements,e.g.selectivity,etchrate,anddeepsub-micronfeatures.Thesedesigndifferencesandotherpotentialusesofeachetcherwillbediscussedinthefollowingparagraphs.Lam1Originally,Lam1wasaSi/poly-Sietcher.Ithasbeenmodifiedandusedasathin
3、Si-nitrideetcher.However,theetchrateislow(lessthan1000A/min).Itisnotabletoetchthicknitride(inmicronmeters)duetopolymerdeposition.TheSF6processgasalsoetchesSi/poly-Sitentimesfasterthannitride.Lam1isstillabletoetchpoly-Si.Therecipeshavebeendeveloped.However,sinceitcannothandleHBr,theoxideselecti
4、vityisnotasgoodasLam4andLam5.Lam2Lam2etchesoxideandthicknitrideusinghighRFpower,850W,whichis2to3timeshigherthanthatofotheretchers.Ithasagraphitetopelectrodethatprovidescarbonforhighoxidetosiliconselectivity.Thegapbetweenthetopandbottomelectrodesis0.38cm,whichisseveraltimessmallerthanonotheretc
5、hers.Tocompensateforthesmallplasmavolumebetweentheelectrodes,theprocesspressureissetat2.8Torr.Thisishigher,comparedtopressuresinotheretchers,whichareinthelowhundredsofmTorrrange.Consequently,thegapandprocesspressureplayimportantrolesintheetchrateanduniformity.Lam3Lam3isatrueRIE(ReactiveIonEnha
6、nced)etcherforaluminum.TheRFpowerisconnectedtothebottomelectrodewherethewafersits.Theelectrodetemperatureissetataround65ºCtoassistthedesorption/evaporationoftheetchbyproducts.Lam3alsohasaPLL(PoweredLoadLock),whichisusedtopassivatetheetchedaluminumsidewalls.Lam4Lam4isthesecondgenerationofLametc
7、hers(RainbowPlatform).Ithasmoresophisticatedrobot,computer,controller,andgashandlingsystemthanitspredecessor,AutoEtcher.Lam4isusedforpoly-Si/Si-nitrideetch.BeforetheMicrolabacquiredSTS,Lam4wasalsousedasadeepsiliconetcher.Lam5Lam5isoneof
