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1、TELEtcherIntroductionOutlineTEL(Unity/DRM)H/WIntroductionOxideEtchApplications&RequirementOxideEtchProcessIntroductionCaseStudyofOxideEtchQ&AOutlineTEL(Unity/DRM)H/WIntroductionOxideEtchApplications&RequirementsOxideEtchProcessIntroductionCaseStudyofOxideEtchQ&ATELPlatformConfigurat
2、ionTELTransferSystemABABCCTELProcessChamberUpper&LowerProcessChamberUpperChamberLowerChamberCoolingPlate&ProtectRingCoolingplateProtectringTorqueWrenchCoolingplate20kgf-cmUpperelectrode3.5kgf-cmInstallCoolingPlateInstallUpperElectrodeESC(ElectrostaticChuck)為了讓晶片與下電極均勻傳熱,在晶背通以He(氦氣),但需將晶片固定,早期
3、使用機械式固定,後發展出ESC。主要是利用矽材半導體之特性,施加電壓可以輕易產生電子電洞停止施加電壓則電子電洞亦可輕易中和。當電極加以直流電產生電壓時,晶圓背面亦產生電極性,兩者尤如平行板電容,以靜電力方式固定晶片。ShieldRing&FocusRingInstallShieldRing&FocusRingUpperElectrodeConditionNewUsedFocusRingConditionNewUsedTELDisplayIntroduction機台系由P1(chamberA),P2(chamberB),TC,PA(轉平邊),C1(LLA),C2(LLB)所構成按此
4、鍵進入alarm歷史紀錄畫面切換Local/Remote顯示所runwafer之批號及程式等相關訊息粉紅色表chamber正在打RF,對wafer進行蝕刻綠色區塊表此區域為維修P1P2狀況,角落紅點表wafer無法自動傳入TCPA直接點擊TC區塊,可以進入Lot歷史紀錄中查詢資C1C2料按Pause,會使傳送停止;按Next,則切換下一頁功能表按Continue,則恢復正常傳送TELDisplayIntroductionSlotStatus藍色:於cassette,等待蝕刻黃色:Arm將其抓入T.M或chamber中,等待或正在蝕刻中綠色:蝕刻完畢,並傳回cassette淺藍色
5、:未蝕刻,直接傳回cassette紫色:蝕刻過程中,有按abort鍵中斷蝕刻蝕刻過程中紅色:於當機棕色:Mappingerror深綠色:蝕刻過程中,有按retry鍵重新完成蝕刻OutlineTEL(Unity/DRM)H/WIntroductionOxideEtchApplications&RequirementsOxideEtchProcessIntroductionCaseStudyofOxideEtchQ&AOxideEtchApplicationsWhatistheapplicationsforSiO2?•Dielectriclayer–isolation,pa
6、ssivation•FOX(Fieldoxide)–isolationbetweenactiveregions•Spacer–protectionofgateformimplantationandmaskofdeviceimplanting•ILD(inter-layerdielectric):DielectricbetweenPolyandmetal•IPD(inter-polydielectric):DielectricbetweenPolylayers•IMD(inter-metaldielectric):Dielectricbetweenmetallayers•Conta
7、ct:connectionbetweenactiveandmetal•Via:connectionbetweenpolylayers(PVIA);connectionbetweenmetallayers(MVIA)TheRequirementsofEtchBack•STIEB,FOXEB,ILDEB,IPDEB,SOGEB…..AP8KAPUSGDep.SiNControlfactor:LineroxideERcontrolP-SUBTK&U%controlSiNDefec