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1、LAM4Poly-SiliconRainbowEtcher1.01.0TitleLAM4Poly-SiliconRainbowEtcher(for4-inchwafersonly)2.02.0PurposeLAM4isafullyautomated,singlewafer,plasma/RIEetcherforpoly-siliconfilm,siliconnitridefilm,anddeepbulksiliconetchingon4-inchwafers.Itcanalsoetchgermani
2、umandgermanium/siliconmixedfilms.3.03.0ScopeThisdocumentprovidesthefollowinginformation:►►GeneraloperationproceduresofLAM4.►►Recipeloading,editing,andsavingtothefloppy/harddrive.►►Userleveltroubleshooting.►►Setupandmonitoretchendpointtrace.4.04.0Applic
3、ableDocuments4.14.1Rainbow4420OperationsandMaintenanceManual,LamResearchInc.(copyinOffice).4.24.2MicrolabOnlineManualChapter7.0(LAMEtcherOverview).4.34.3MaterialSafetyDataSheetsforO2,Cl2,HBr,Ar,He,SF6,andCHF3(copyinLobby).5.0Definitions&ProcessTerminol
4、ogy5.15.1Plasma/RIEEtcher:ThiskindofetcherusesgasradicalsformedintheplasmageneratedbyRFpowertoetchfilmonthewafer.Thewaferisplacedonthegroundedelectrode,fortheplasmaetcher,toreduceradiationdamageonthedevices.ForRIEetcherthewaferisplacedonthepoweredelect
5、rodethatinducesionbombardmentsonthewafertoincreaseetchrateandanisotropy.5.25.2EtchRate:Thethicknessofthefilmetchedperunittime,usuallyinÅ/minute.5.35.3EtchUniformity:Itisdefinedas(maximumetchrate–minimumetchrate)/(maximumetchrate+minimumetchrate),usuall
6、yin%.5.45.4EtchSelectivity:Theetchrateratiobetweentwodifferentfilms/substrate.5.55.5EtchAnisotropy:Thedegreeofanisotropyisdefinedby1–(lateraletchrate/verticaletchrate).Avaluezeromeansisotropicetchingandoneisperfectanisotropic.5.65.6EndpointDetection:La
7、m4monitorsthelightemittedbytheetchby-productintheplasmaforendpointdetection.Whenthelightintensityreachesapresetvalue,theetchprocessstepstops.Usually,theprocesscontinuesonanover-etchsteptoremovetheresiduematerials.6.06.0SafetyFollowthegeneralsafetyguide
8、linesinthelabaswellasthespecificsafetyrulesasperfollow:6.16.1RFPowerHazard:LAM4usesa13.56MHz,1250WRFpowergenerator.NevertouchaRFpowercordwhentheRFpowerison.Donotlookattheplasmaforlongperiodtime.6.26.2ChemicalHazard:AllgasesusedbyLAM4are
