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1、3390J.Phys.Chem.C2010,114,3390–3395GenerationofChargedNanoparticlesDuringtheSynthesisofSiliconNanowiresbyChemicalVaporDepositionChan-SooKim,†Il-JoKwak,†Kyoung-JinChoi,‡Jae-GwanPark,‡andNong-MoonHwang*,†NationalResearchLaboratoryofChargedNanoparticles,Departme
2、ntofMaterialScienceandEngineering,SeoulNationalUniVersity,Sillim-dong,Gwanak-gu,Seoul,151-742,Korea,andNano-MaterialsResearchCenter,KoreaInstituteofScienceandTechnology,Seoul,136-791,KoreaReceiVed:October27,2009;ReVisedManuscriptReceiVed:January20,2010Thegene
3、rationofchargednanoparticlesinthegasphasehasfrequentlybeenreportedduringthesynthesisofthinfilmsandnanostructures,suchasnanowires,usingchemicalvapordeposition(CVD).InanefforttoconfirmwhetherchargedsiliconnanoparticleswerealsogeneratedduringthesynthesisofSinanowi
4、resbyCVD,adifferentialmobilityanalyzer(DMA)combinedwithaFaradaycupelectrometer(FCE)wasconnectedtoanatmospheric-pressureCVDreactorundertypicalconditionsforSinanowiregrowth.DMAmeasurementsshowedthatbothpositivelyandnegativelychargednanoparticleswereabundantlyge
5、neratedinthegasphaseduringCVD.Theprocessparameterssuchasreactortemperature,molarratioofSiCl4/H2,andhydrogenflowrateaffectednotonlythegrowthbehavioroftheSinanowiresbutalsothesizedistributionofbothpositivelyandnegativelychargednanoparticles.Introductionexplainth
6、egrowthofSinanowiresandothernanostructuresinasilaneplasmaCVDprocess.Itiswell-knownthatchargedSinanowireshaveattractedconsiderableattentionbecausenanoparticlesareformedandsuspendedinthegasphaseduringoftheirpotentialapplicationsinnanoscaleelectronicandplasmaCVD
7、,whichiscalled“dustyplasma”.32,33Ostrikov32thermoelectronicdevices.1–4Variousmechanisms,suchasconductedanextensivereviewontheincorporationofgasphasevapor-liquid-solid(VLS)growth,vapor-solid(VS)growth,nucleiintonanostructuresduringareactiveplasma-assistedandox
8、ide-assistedgrowth,havebeenproposedfornanowirenanoassemblyprocess.Basedontheresults,theelectrostaticgrowth.5However,theformationmechanismisnotfullyenergyappearstoplayacriticalroleinthegro
