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1、higherapplicationvalueandmarketforeground.Basedon0.15umbasiclogicprocess,current0.15umhighspeedlogicprocessisformedthroughcomputerprocesssimulationtomainlyadjustpolygatelength,implantdosageandthermalbudget.Buttherearestillsomeissuesthatneedtobesolved.Forexample,deviceelectricalparameters
2、havesomeproblemsneedtobeoptimized,andlowproductyieldneedtobeimproved.Duetothesebackgrounds,thispaperisaimedtooptimize0.15umhighspeedlogiccircuitdeviceandprocessperformancetoimproveproductyield.Torealizethesetasks,weadjustprocessparametersthroughtheoryanalysisandexperimentvalidation.Forex
3、ample,wemodifytheimplantdosageandbackendinter-metal-dielectricHDPCVDrecipeandsoon.Firstly,therearetwomajorissuesofdeviceelectricalparameters.Oneistheelectricalparametersmismatchofhorizontalandverticaldevice.TheotheristhatNMOSoffstatuescurrentistoohigh.Soaccordingtothecomparisonresultbetw
4、eencurrentprocessand0.15umbasiclogicprocess,wefindthemismatchofhorizontalandverticaldeviceisduetotheshadoweffectinLDDimplantationprocess.Weadjusttheionimplantrecipefromonerotationsteptofourstepsduringimplantprocesstosolvethedevicemismatchissue.Forthesecondproblem,weadjustimplantdosageofL
5、DDandPocketsteps.Atthesametime,wealsoadjusttheparametersofbackendinterconnectiontochangethewaferstress.Astheresultoftheseactions,wereduceNMOSoffstatuescurrentsuccessfully.Aftertheseactions,yieldhasbeenimprovedtoabout40%,butstilldoesn’tmatchthecriteriaofmassproduction.Wealsooptimizebacken
6、dprocess.ItmainlyincludesHDPdepositionparametersofisolationlayersandsoon.Alltheseactionshelpustoimproveyieldfrom40%to70%.Finally,werealizetooptimize0.15umhighspeedlogicdeviceandimproveproductyield.Massproductionlineissetupsuccessfully.KEYWORDS:ICManufacture,0.15UM,HighSpeedLogicDevice,HD
7、PCVD,DeviceOptimization,IonImplant,WaferStress,YieldImprovement目录1绪论············································································································11.1半导体产业的发展概况······································································11.2逻辑器件的分类及
