gan+hemt器件模型研究

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1、杭州电子科技大学硕士学位论文5.1大信号等效电路模型的基本组成...................................................................305.2常见的大信号模型分析...................................................................................315.2.1Curtice模型......................................................................................

2、......315.2.2Statz模型................................................................................................325.2.3EEHEMT模型........................................................................................335.2.4Angelov模型...............................................................

3、...........................365.3GaNHEMT器件Angelov_GaN模型建立......................................................375.3.1GaNHEMT直流特性拟合...................................................................375.3.2GaNHEMTC-V特性拟合....................................................................405.3.3大信号模型

4、的仿真与验证....................................................................425.4小结...................................................................................................................45第6章基于Angelov模型的InPHEMT模型开发....................................................466.1InPHEMT的Kink效应...

5、................................................................................466.2InPHEMT模型的实现原理.............................................................................476.3InPHEMT模型的建立.....................................................................................486.4InPHEMT模型的验证...

6、..................................................................................526.5小结...................................................................................................................55第7章总结与展望....................................................................................

7、....................567.1总结...................................................................................................................567.2展望...............................................................