gan+hemt器件模型分析

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1、硕士学位论文题目:GaNHEMT器件模型研究研究生洪阿灌专业电路与系统指导教师孙玲玲教授刘军副研究员完成日期2015年12月万方数据杭州电子科技大学硕士学位论文ABSTRACTWithbothhighefficiency,highpowerdensityandhighlinearitycapability,GaNHEMTtechnologyhaswideapplicationsinthemillimeterwavetransceiversystem.Devicemodelisabridgebetweenthedevicetechnologyandcircuitdesign.GaNHEM

2、Tlargesignalmodelsandmodelingtechnologyareinastateofdeprivationforalongtime,anditisdifficulttomeettheactualapplicationrequirements.Inthispaper,GaNHEMTdevicemodelandlarge-signalmodelparameterextractionmethodshavebeenstudied.Fromtheperspectiveofthedevicebehavioranalysis,thesmallsignalmodeltopology

3、andanalyticalextractionalgorithmisderived,andtheworkisabasisforlarge-signalmodelparameterextraction.Toextractlarge-signalmodel,Angelov_GaNmodelhasbeenusetoestablishGaNHEMTlarge-signalmodelofacommercialGaNprocess,andsummeduptheparameterextractionprocessofthemodel.BasedonAngelov_GaNmodel,weusetwoA

4、ngelov_GaNmodelsinparallelmodetosetupaInPHEMTlargesignalmodel,whichsolvestheproblemthattraditionalIII-VHEMT/FETmodelcannotcharacterizewhenInPHEMTunderstrongKinkeffect.Themainresearchresultsarelistedasfollowing:1)ThedevicestructureandmechanismofGaNHEMTandthedevicebehaviorofofacommercialGaNprocess

5、wereanalyzedtoestablishGaNHEMTmodeldatabase.2)Weproposesmall-signalequivalentcircuitmodelstructureofGaNHEMTandparameterextractionmethod.ModelsimulationandthemeasuredSparametersareingoodagreementwithinthefrequencyrangefrom0.1-20.1GHz.3)Curticemodel,Statzmodel,Angelovmodel,EEFET/EEHEMTmodelareanal

6、yzedinthispaper.Angelov_GaNmodelareusedforGaNHEMTlargesignalmodeling.ThecurrentandnonlinearchannelcapacitorsformulaofAngelov_GaNmodelhavebeenanalysedindetail.Thelarge-signalcharacteristicsofmodelsimulationandtestresultshaveagoodagreement.4)ImproveAngelovmodelfortheInPHEMTmodelingunderstrongKinke

7、ffect.InPHEMTofadomesticprocessisusedformodelingverification.TheDCbiasassociatedS-parametersimulationandtestresultshaveagoodagreementandvalidatetheeffectivenessofthemodel.Keywords:GaNHEMT,InPHEMT,Small-signalmodel,Large-sign