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1、IEEETRANSACTIONSONPOWERELECTRONICS,VOL.27,NO.5,MAY20122657AnInvestigationIntotheEffectsoftheGateDriveResistanceontheLossesoftheMOSFETSnubberDiodeConfigurationJianjingWang,StudentMember,IEEE,RiverTin-hoLi,Member,IEEE,andHenryShu-hungChung,SeniorMember,IEEEAbstractThispaperp
2、resentsaninvestigationintotheeffectslossesoftheMOSFETaresignificantlyaffectedbytheexternalofthegatedriveresistanceonthelossesoftheMOSFETsnubbercircuitryassociatedwithit.TheconfigurationofaMOSFETdiode(MSD)configurationcommonlyusedinmanypowercon-andadiodewithonecommonterminali
3、swidelyusedinpowerverters.Ananalyticallossmodelthattakesthecircuitstrayin-convertersfordrivinganinductiveload.Extensiveresearchhasductances,MOSFETparasiticcapacitancesandinductances,andreversecurrentcharacteristicofthefreewheelingdiodeintoconsid-beendoneonmodelingtheswitc
4、hingcharacteristicsandlosseserationisderivedtodescribetheinteractionsamongtheMOSFET,ofsuchaconfiguration[5][10].Asdiscussedin[11],therearesnubber,andfreewheelingdiodeduringtheswitchingtransients.threemajorcategoriesoflossmodelsforstudyingtheentirecon-Twopossibleturn-ONswit
5、chingsituations,determinedbythegatefiguration.Theyarephysics-basedmodel,behavioralmodel,anddrivepartandthepowerpart,respectively,aredistinguishedinanalyticalmodel.Forthesakeofsimplicityandcomputationaltheanalysis.Itisthenusedtostudytheeffectsofthestrayinduc-tances,gatedriv
6、eresistanceandsnubberontheswitchingbehav-efficiencyintheanalysis,manyanalyticalmodelsofdifferentiors,powerlossdistribution,andvoltagestressontheMOSFETincomplexitylevelshavebeenproposed.theentireMSDconfiguration.AsequenceofstepswillbegiventoThesimplestanalyticalmodelfortheMO
7、SFETistheoneillustratehowanoptimalcombinationofthegatedriveresistancethathastheassumptionofpiecewiselinearswitchingwave-andsnubbercapacitanceisdetermined,inordertominimizetheforms[4].However,themajorlimitationofsuchmodelisitsoveralllossoftheMSDconfigurationforamaximumpermi
8、ssiblevoltagestressontheMOSFET.Thelossmodelandmethodofde-neglectoftheeffectsofthestrayinductance
