资源描述：
《Investigation in Effects of Design Parameters on TSV-bump.pdf》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。
1、Simulation-basedInvestigationinEffectsofDesignParametersonElectricalCharactersforaTSV-bumpCombination1121RuniuFang,XinSun,MinMiao,YufengJin1NationalKeyLab.ofScienceandTechnologyonMicro/NanoFabrication,PekingUniversity＃5,YiheyuanRd,HaidianDistrict,Beiji
2、ng100871,P.R.China2Inst.ofInformationMicrosystem,BeijingInformationScience&TechnologyUniv.,Beijing,P.R.ChinaNo.35,NorthFourthRingRoad,ChaoYangDistrict,Beijing100101,P.R.ChinaE-mail:yfjin@pku.edu.cnsystematicstructuralparametersontransmissionAbstractper
3、formanceareinvestigatedin[3].Thesiliconindustryhaswitnessedahalf-centurygallopThispaperfocusesonthestudyofGround-Signal-Groundofelectronics.Whentechnologiesreachedtheirlimits,new(GSG)TSV-bumpcombination,whichiswidelyusedintesttechnologiesarebuddingouta
4、ndprolongtheunbreakablevehiclesofTSVsystems.TheelectricalcharacteristicsoftheMoore’sLaw.Thistime,ThroughSiliconVia(TSV)isTSVsystemintermsofscattering(S)parametersisconsideredthemostpromisingtechnologytrendinthenextthoroughlystudied,whereeffectsofdesign
5、parameters,decade.Inthispaper,westudytheelectricalcharactersofaincludinggeometriesandmaterialparameters,onsystematicTSV-bumpcombinationundertheground-signal-groundelectricalcharacteristicsareexaminedbya3Dconfiguration.Effectsofdesignparameters,includin
6、gelectromagneticsolver.Inordertoverifythesimulatedgeometriesandmaterialparameters,onsystematicelectricalelectricalcharacters,weproposedtheequivalentelectricalcharacteristicsareinvestigatedandconcludedintermsofmodelconsistingofRLCGparasiticelementsunder
7、theGSGscatter(S)parametersbya3Delectromagneticsolver.Toconfiguration.Analyticalmodelsareassignedtoeachverifythesimulatedelectricalperformance,thispaperparasiticcomponentbyemployingclassicalequivalentcircuitproposestheequivalentelectricalmodeloftheGSGmo
8、delsoftransmissionlines.GoodagreementonS-configurationconsistingofRLCGparasiticelements.parametersbetweenthe3DelectromagneticmodelandtheAnalyticalmodelsareassignedtoeachparasiticcomponentproposedcircuitmodelisachievedinthefrequencyrange
