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ID:40352725
大小:3.23 MB
页数:56页
时间:2019-07-31
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1、BaiCong2015-2016-18086ArchitectureAddressingModeandInstructionSetAssemblylanguageandProgrammingApplicationMemoryandMemoryInterfacingMemorychipsandtheirapplicationI/OInterfaceI/OchipsandapplicationsandApplicationProcessorMemoryI/ODataBusAddressBusControlBusObjectives
2、MemorydevicesanditsclassificationMemoryarchitecturePinFunctionforSRAMandEPROMMemoryInterfaceandApplicationsCachememoryKeytermsAddressdecoder地址译码器Backupmassstoragesystem海量备份存储系统Bidirectionalbus双向总线ChipEnabled(CE)芯片启动ElectricallyErasableRead-OnlyMemory(EEPROM)
3、电可擦除ROMErasableProgrammableRead-OnlyMemory(EPROM)可擦除可编程的ROMFlashdisk闪存盘FlashmemoryEPROM闪存EPROMFloppydisk软盘MemoryInterface存储器接口Magneticdisk磁盘Nonvolatile非易失性OutputEnable(OE)输出允许ProgrammableRead-OnlyMemory(PROM)可编程ROMWriteEnable(WE)写入允许TypicalBUSInterfaceMulti
4、layerstoragenetworkRegisterCacheMemoryDiscMemoryTapeMemoryOpticalDiscMemoryRelationbetweencapacityandspeedisshowninpyramidalconstruction.Memory:storetheprogramanddataSemiconductorMemoryFundamentalsAmongthemostwidelyusedisRAMandROM.MemorycapacityThenumberofbitstha
5、tasemiconductorchipcanstoreiscalleditschipcapacity(bitsorbytes)MemoryorganizationEachmemorychipcontains2xlocationswherexisthenumberofaddresspinsonthechip.Eachlocationcontainsybits,whereyisthenumberofdatapinsonthechip.Theentirechipcancontain2x×ybitsExammemoryorga
6、nizationof4K×4:212=4096locations,eachlocationholding4bits.Memoryspeed(accesstime)MemorytypesROM(ReadOnlyMemory)ROMisthetypeofmemorythatdoesnotloseitscontentswhenpoweristurnedoff.Itisalsocallednonvolatilememory.PROM(ProgrammableMemory)Userprogrammable(one-timepro
7、grammable)memory.IftheinformationburnedintoPROMiswrong,itneedstobediscardedsinceinternalfusesareblownpermanently.Specialequipmentneeded:ROMburnerorROMprogrammer.EPROM(ErasableProgrammableROM)2,000timesAllowsmakingchangesinthecontentsofPROMafteritisburned.Onecanp
8、rogramthememorychipanderaseitthousandsoftimes.Erasingitscontentscantakeupto20minutes;theentirechipiserased.AllEPROMchipshaveawind
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