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1、JOURNALOFADVANCEDDIELECTRICSVol.3,No.2(2013)1350011(8pages)©WorldScientificPublishingCompanyDOI:10.1142/S2010135X13500112Enhancedferroelectricpropertiesofhighly(100)orientedPb(Zr0:52Ti0:48)O3thickfilmspreparedbychemicalsolutiondepositionWanlinZhu,WeiRen*,HongXin,PengShiandXiaoqing
2、WuElectronicMaterialResearchLaboratory,KeyLaboratoryoftheMinistryofEducation,&InternationalCenterforDielectricResearch,Xi’anJiaotongUniversity,Xi’an,710049,P.R.China*wren@mail.xjtu.edu.cnReceived23April2013;Revised23June2013;Accepted28June2013;Published12August2013FerroelectricPb(
3、Zr0:52Ti0:48)O3(PZT)thickfilmswithhighly(100)preferentialorientationhavebeenpreparedbychemicalsolutiondepositionprocessonPt/Ti/SiO2/(100)Sisubstratesandpyrolyzedat350C450C,thenannealedat650C.Thetypicalthicknessofthefilmsis3.9m.EffectsofthepyrolysistemperatureandexcessPbOonthe
4、orientation,dielectricandferroelectricpropertiesofPZTthickfilmshavebeendiscussed.Domainswitchinganddepolingprocesswerestudiedbypiezoelectricforcemicroscopy.(100)orientedPZTfilmsexhibitenhancedelectricalproperties.Thedielectricconstantandlosstangentofthefilmsare21444and0.022at1kHz,
5、respectively.Theremnantpolarizationincreasesfrom27.6to34.6C/cm,andthecoercivefielddecreasesfrom61.4to43.5kV/cm,whentheorientationofthefilmschangesfromtherandomorientationtothepreferential(100)orientation.Theleakagecurrentdensityis108A/cm2atdcfieldof0.25kV/cm,andthenincreasesto10
6、6A/cm2at40kV/cm.ThepiezoelectricresponseoftheorientedfilmsisinvestigatedbyPiezoelecricForceMicroscopy(PFM).Keywords:PZTfilms;(100)preferredorientation;PbOexcess;pyrolysistemperature;electricalproperties.1.Introductionpreferential(100)orientation,ferroelectricandpiezoelectricprope
7、rtiesofPZTthickfilmshavebeeninvestigated.Thethin/thickfilmsofPbZrxTi1xO3(PZT)nearthemor-photropicphaseboundary(MPB)exhibitexcellentferro-electricandpiezoelectricproperties17andhavewide2.Experimentsapplicationsrangingfromnonvolatileferroelectricrandomaccessmemories(FRAM)tomicroel
8、ectromechanicalsystemsForpreparat
