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1、TemperatureDependenceofSi-BasedThin-FilmSolarCellsFabricatedonAmorphoustoMicrocrystallineSiliconTransitionPhaseKobsakSRIPRAPHAIhsanulAfdiYUNAZSeungYeopMYONGAkiraYAMADAandMakotoKONAGAIDepartmentofPhysicalElectronics,TokyoInstituteofTechnology,2-12-1-S9-9,O-okayama,Meguro-ku,Tokyo152-8552,Ja
2、panQuantumNanoelectronicsResearchCenter,TokyoInstituteofTechnology,2-12-1-S9-9,O-okayama,Meguro-ku,Tokyo152-8552,Japan(ReceivedJune5,2007;acceptedAugust20,2007;publishedonlineNovember6,2007)Thetemperaturedependenceofsilicon(Si)-basedthin-filmsingle-junctionsolarcells,whoseintrinsicabsorber
3、swerefabricatedonthetransitionphasebetweenhydrogenatedamorphoussilicon(a-Si:H)tohydrogenatedmicrocrystallinesilicon(mc-Si:H),wasinvestigated.Byvaryingthehydrogendilutionratio,wide-band-gapprotocrystallinesilicon(pc-Si:H)andmc-Si:Habsorberlayerswereobtained.Photo-currentdensity–voltage(Phot
4、o-J–V)characteristicsweremeasuredunderAM1.5illuminationatambienttemperaturesintherangeof25–75C.Wefoundthatthesolarcellswithpc-Si:H,whichexistsjustbelowthea-Si:Htomc-Si:Htransitionboundary,showedthelowesttemperaturecoefficient(TC)forconversionefficiencyandopen-circuitvoltage(Voc),whilethes
5、olarcellsfabricatedattheonsetofthea-Si:Htomc-Si:HphasetransitionexhibitedarelativelyhighTCforandVoc.Experimentalresultsindicatedthatpc-Si:Hisapromisingmaterialfortheabsorberlayerofthesinglejunctionorthetopcelloftandemsolarcellsthatoperateinhightemperatureregions.KEYWORDS:temperaturedepende
6、nce,amorphoussilicon,protocrystallinesilicon,Sithin-filmsolarcell,solarcells1.IntroductionIngeneral,thesolarcellperformanceismeasuredunderthestandardtestconditions(STC)ofacelltemperatureof25摄氏度andanirradianceof100mWcm2withAM1.5spectraldistributions.However,inanoutdoorinstallation,theopera
7、tingtemperatureofsolarcellsconsiderablychangesdependingontheenvironment,i.e.,theclimateintheinstalledarea.Inatropicalregion,theoperatingtemperatureoftenreachesmorethan70摄氏度.Theincreaseintheoperatingtemperatureleadstoadeclineinconversionefficiencymainlyduetothe
