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1、TemperatureDependenceofSi-BasedThin-FilmSolarCellsFabricatedonAmorphoustoMicrocrystailineSiliconTransitionPhaseKobsakSRIPRAPHAIhsanulAfdiYUNAZSeungYeopMYONGAkiraYAMADAandMakotoKONAGAIDepartmentofPhysicalElectronics,TokyoInstituteofTechnology,2-12T-S9-9,0-okayama,Mcguro-ku,Tokyo1
2、52-8552,JapanQuantumNanoeloctronicsResearchCenter,TokyoInstituteofTechnology,2T2T-S9-9,0-okayan)a,Meguro-ku,Tokyo152-8552,Japan(ReceivedJune5,2007;acceptedAugust20,2007;publishedonlineNovember6,2007)Thetemperaturedependenceofsilicon(Si)-basedthin-门lmsingle-junctionsolarcells,who
3、seintrinsicabsorberswerefabricatedonthetransitionphasebetweenhydrogenatedamorphoussilicon(a~Si:II)tohydrogcnatodmicrocrystallinesilicon(mc-Si:I1),wasinvestigated・Byvaryingthehydrogendilutionratio,wide-band-gapprotocrystal1inesilicon(pc-Si:H)andmc-Si:Habsorberlayerswereobtained.P
4、hoto-currentdensity-voltage(Photo-J-V)characteristicsweremeasuredunderAML5illuminationatambienttemperaturesintherangeof25-75=C・Wefoundthatthesolarcellswithpc-Si:H,whichexistsjustbelowthea-Si:Htomc-Si:IItransitionboundary,showedthelowesttemperaturecoefficient(TC)forconversioneffi
5、ciencyandopen-circuitvoltage(Voc),whilethesolarcellsfabricatedattheonsetofthea~Si:Htomc-Si:HphasetransitionexhibitedarelativelyhighTCforandVoc.Experimentalresultsindicatedthatpc-Si:Hisapromisingmaterialfortheabsorberlayerofthesinglejunctionorthetopcelloftandemsolarcellsthatopera
6、teinhightemperatureregions.KEYWORDS:temperaturedependence,amorphoussilicon,protocrystallinesilicon,Sithin-filmsolarcell,solarcells1・IntroductionIngeneral,thesolarcellperformanceismeasuredunderthestandardtestconditions(STC)ofacelltemperatureof25摄氏度andan让radianceof100mWcmJ2withAM1
7、.5spectraIdistributeons.However,inanoutdoorinstallation,theoperatingtemperatureofsolarcellsconsiderablychangesdependingontheenvironment,i.e.,theclimateintheinstalledarea・Inatropicalregion,theoperatingtemperatureoftcnreachesmorethan70摄氏度・Theincreaseintheoperatingtemperatureleadst
8、oadeclineinconversionefficiencymainlyduetothedr
