MOS -最详细的介绍.pdf

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1、PowerMOSFETBasicandApplicationSongLiuMOSFETBasic
MOSFET:MetalOxideSemiconductorFieldEffectTransistorisathree-terminaldeviceswhichinbasictermbehavesasavoltagecontrolledswitch（压控）.
氧化层MetalLayer：门极(现在多晶硅Polysilicon形成门极）
氧化隔离层OxideIsolationLayer：防止电流在门极和其它两电极间D、S

2、极流动，但并不阻断电场ElectricField.
半导体层SemiconductorLayer：取决于门极电压，阻止或允许电流在D/S间流通DrainGateSourceDrainSourceGateCircuitSymbolPackagePinLayoutMOSFETBasic
MOSFET半导体特征MOS是多子单极型器件(无少子),受温度影响小,PMOS多子是空穴,NMOS多子是电子,MajorityCarrier.反转层:InversionLayerDMOS:双重扩散MOS,DoubleDiffuse

3、d氧化层相当于介电质DielectricMaterial(Dielectricconstant)掺杂Doged,高掺杂浓度区域Heavilydopedregion半导体层：依赖于门极电压，阻断或允许电流在漏极D和源极S间流动SignalMOSFETStructure
1.平面横向（Lateral）导电型MOSFET管Vdd增加或减少门极电压会增大或减少N沟道的大小，以此控制器件导通没有充分应用芯片的尺寸，电流和电压额定值有限LoadCMOS工艺，适合低压信号管，如微处理器，运放，数字D电路Driver

4、低的电容，快的开关速度GSinversionlayer沟道D-MOSFETStructure
2.平面垂直导电型功率MOSFET管D-MOSFET(VDMOSFET)：VerticalDouble-diffusedMOSFET，垂直导电双扩散，70年代商业应用平面Planar门极结构：n-typechannelisdefinedbythedifferenceinthelateralextensionofthejunctionsunderthegateelectrode.Thevoltageblockingcap

5、abilityisdeterminedbythedopingandthicknessoftheN-driftregion.多个单元结构。具有相同RDS(on)电阻MOSFET并联，等效电阻为一个MOSFET单元RDS(on)的1/n，裸片面积越大其导通电阻越低。Thedriftregionresistanceincreasesrapidlywithincreasingblockingvoltage。Double-diffused？？D-MOSFETStructure
2.平面垂直导电型功率MOSFET管D-MOS

6、FETStructure
2.平面垂直导电型功率MOSFET管Thechannellengthofthisdevicecouldbereducedtosub-microndimensionsbycontrollingthediffusiondepthsoftheP-baseandN+sourceregionswithoutresortingtoexpensivelithographytools.Thedevicefabricationprocessreliedupontheavailableplanargate

7、technologyusedtomanufactureCMOSintegratedcircuits.ThefastswitchingspeedandruggednessoftheD-MOSFETstructureweresignificantadvantagescomparedwiththeperformanceoftheavailablebipolarpowertransistorLVMOSRDSONisconstrainedbythesignificantchannelresistanceduetothel

8、owchanneldensityandtheJFETregioncontribution.JFETregionsubstantiallyincreasestheinternalresistanceU-MOSFETStructure
3.沟槽垂直导电型MOSFET管V型沟槽：不容易生产，V尖角容易形成高的电场.U型沟槽：U-MOSFET结构90年代商业化应