irlml0060trpbf;中文规格书,datasheet资料

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1、PD-97439AIRLML0060TRPbFHEXFETPowerMOSFETVDS60VVGSMax±16VRDS(on)max92m(@VGS=10V)RDS(on)maxMicro3TM(SOT-23)116m(@VGS=4.5V)IRLML0060TRPbFApplication(s)Load/SystemSwitchFeaturesandBenefitsFeaturesBenefitsIndustry-standardpinoutMulti-vendorcompa

2、tibilityCompatiblewithexistingSurfaceMountTechniquesresultsinEasiermanufacturingRoHScompliantcontainingnolead,nobromideandnohalogenEnvironmentallyfriendlyMSL1,IndustrialqualificationIncreasedreliabilityAbsoluteMaximumRatingsSymbolParameterMax.UnitsVDS

3、Drain-SourceVoltage60VID@TA=25°CContinuousDrainCurrent,VGS@10V2.7ID@TA=70°CContinuousDrainCurrent,VGS@10V2.1AIDMPulsedDrainCurrent11PD@TA=25°CMaximumPowerDissipation1.25WPD@TA=70°CMaximumPowerDissipation0.80LinearDeratingFactor0.01W/°CVGSGate-to-Source

4、Voltage±16VTJ,TSTGJunctionandStorageTemperatureRange-55to+150°CThermalResistanceSymbolParameterTyp.Max.UnitsRJAJunction-to-Ambient–––100°C/WRJAJunction-to-Ambient(t<10s)–––99ORDERINGINFORMATION:Seedetailedorderingandshippinginformationonthelastpage

5、ofthisdatasheet.Notesthroughareonpage10www.irf.com103/09/12http://oneic.com/ElectricCharacteristics@TJ=25°C(unlessotherwisespecified)SymbolParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-SourceBreakdownVoltage60––––––VVGS=0V,ID=250μ

6、AV(BR)DSS/TJBreakdownVoltageTemp.Coefficient–––0.06–––V/°CReferenceto25°C,ID=1mA–––98116VGS=4.5V,ID=2.2ARDS(on)StaticDrain-to-SourceOn-Resistancem–––7892VGS=10V,ID=2.7AVGS(th)GateThresholdVoltage1.0–––2.5VVDS=VGS,ID=25μAIDSS––––––20VDS=60V,VGS=0VD

7、rain-to-SourceLeakageCurrentμA––––––250VDS=60V,VGS=0V,TJ=125°CIGSSGate-to-SourceForwardLeakage––––––100VGS=20VnAGate-to-SourceReverseLeakage––––––-100VGS=-20VRGInternalGateResistance–––1.6–––gfsForwardTransconductance7.6––––––SVDS=25V,ID=2.7AQgTotalGa

8、teCharge–––2.5–––ID=2.7AQgsGate-to-SourceCharge–––0.7–––nCVDS=30VQgdGate-to-Drain("Miller")Charge–––1.3–––VGS=4.5Vtd(on)Turn-OnDelayTime–––5.4–––VDD=30VtrRiseTime–––6.3–––ID=1.0Anstd(off)Turn-OffDelayTime–––6.8–––RG=6.8tfFallTime–––4