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1、AO4801A30VP-ChannelMOSFETGeneralDescriptionProductSummaryTheAO4801AcombinesadvancedtrenchMOSFETVDS-30VtechnologywithalowresistancepackagetoprovideID(atVGS=-10V)-5AextremelylowRDS(ON).ThisdeviceissuitableforuseasaRDS(ON)(atVGS=-10V)<48mWloadswitchorinPWMapplications.RD
2、S(ON)(atVGS=-4.5V)<57mWRDS(ON)(atVGS=-2.5V)<80mW100%UISTested100%RgTestedSOIC-8D1D2TopViewBottomViewSOIC-8TopViewS218D2G227D2S136D1G1G2G145D1S1S2Pin1AbsoluteMaximumRatingsTA=25°CunlessotherwisenotedParameterSymbolMaximumUnitsDrain-SourceVoltageVDS-30VGate-SourceVoltag
3、eVGS±12VContinuousDrainTA=25°C-5IDCurrentTA=70°C-4ACPulsedDrainCurrentIDM-28CAvalancheCurrentIAS,IAR17ACAvalancheenergyL=0.1mHEAS,EAR14mJTA=25°C2BPDWPowerDissipationTA=70°C1.3JunctionandStorageTemperatureRangeTJ,TSTG-55to150°CThermalCharacteristicsParameterSymbolTypMa
4、xUnitsAMaximumJunction-to-Ambientt≤10s4862.5°C/WADRqJAMaximumJunction-to-AmbientSteady-State7490°C/WMaximumJunction-to-LeadSteady-StateRqJL3240°C/WRev3:Mar.2011www.aosmd.comPage1of5http://oneic.com/AO4801AElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)SymbolPar
5、ameterConditionsMinTypMaxUnitsSTATICPARAMETERSBVDSSDrain-SourceBreakdownVoltageID=-250mA,VGS=0V-30VVDS=-30V,VGS=0V-1IDSSZeroGateVoltageDrainCurrentmATJ=55°C-5IGSSGate-BodyleakagecurrentVDS=0V,VGS=±12V±100nAVGS(th)GateThresholdVoltageVDS=VGSID=-250mA-0.5-0.9-1.3VID(ON)
6、OnstatedraincurrentVGS=-4.5V,VDS=-5V-28AVGS=-10V,ID=-5A4048mWTJ=125°C6072RDS(ON)StaticDrain-SourceOn-ResistanceVGS=-4.5V,ID=-3.5A4557mWVGS=-2.5V,ID=-2.5A6080mWgFSForwardTransconductanceVDS=-5V,ID=-5A18SVSDDiodeForwardVoltageIS=-1A,VGS=0V-0.7-1VISMaximumBody-DiodeConti
7、nuousCurrent-2.5ADYNAMICPARAMETERSCissInputCapacitance515645780pFCossOutputCapacitanceVGS=0V,VDS=-15V,f=1MHz5580105pFCrssReverseTransferCapacitance305580pFRgGateresistanceVGS=0V,VDS=0V,f=1MHz47.812WSWITCHINGPARAMETERSQg(4.5V)TotalGateCharge579nCQgsGateSourceChargeVGS=
8、-4.5V,VDS=-15V,ID=-5A1.5nCQgdGateDrainCharge2.5nCtD(on)Turn-OnDelayTime6.5nstrTurn-OnRiseTimeVGS=-10V,VDS=-15V,RL=3W,3.5nstD
