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1、FreescaleSemiconductorDocumentNumber:MRFE6S9060NTechnicalDataRev.1,10/2007RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFETDesignedforbroadbandcommercialandindustrialapplicationswithMRFE6S9060NR1frequenciesupto1000MHz.Thehighgainandbroad
2、bandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplicationsin28voltbasestationequipment.•TypicalSingle-CarrierN-CDMAPerformance@880MHz,VDD=28Volts,I880MHz,14WAVG.,28VDQ=450mA,Pout=14WattsAvg.,IS-95CDMA(Pilot,Sync,Paging,Traf
3、ficCodes8Through13)ChannelBandwidth=1.2288MHz.PAR=SINGLEN-CDMA9.8dB@0.01%ProbabilityonCCDF.LATERALN-CHANNELPowerGain21.1dBBROADBANDDrainEfficiency33%RFPOWERMOSFETACPR@750kHzOffset-45.7dBcin30kHzChannelBandwidth•CapableofHandling10:1VSWR,@32Vdc,880MHz,3dB
4、Overdrive,DesignedforEnhancedRuggednessGSMEDGEApplication•TypicalGSMEDGEPerformance:VDD=28Volts,IDQ=500mA,Pout=21WattsAvg.,FullFrequencyBand(920-960MHz)PowerGain20dBCASE1265-09,STYLE1DrainEfficiency46%TO-270-2SpectralRegrowth@400kHzOffset=-62dBcPLASTICSp
5、ectralRegrowth@600kHzOffset=-78dBcEVM1.5%rmsGSMApplication•TypicalGSMPerformance:VDD=28Volts,IDQ=500mA,Pout=60Watts,FullFrequencyBand(920-960MHz)PowerGain20dBDrainEfficiency63%Features•CharacterizedwithSeriesEquivalentLarge-SignalImpedanceParameters•Inte
6、gratedESDProtection•225°CCapablePlasticPackage•RoHSCompliant•InTapeandReel.R1Suffix=500Unitsper24mm,13inchReel.Table1.MaximumRatingsRatingSymbolValueUnitDrain-SourceVoltageVDSS-0.5,+66VdcGate-SourceVoltageVGS-0.5,+12VdcMaximumOperationVoltageVDD32,+0VdcS
7、torageTemperatureRangeTstg-65to+150°CCaseOperatingTemperatureTC150°COperatingJunctionTemperature(1,2)TJ225°CTable2.ThermalCharacteristicsCharacteristicSymbolValue(2,3)UnitThermalResistance,JunctiontoCaseRθJC°C/WCaseTemperature80°C,60WCW0.77CaseTemperatur
8、e78°C,14WCW0.881.ContinuoususeatmaximumtemperaturewillaffectMTTF.2.MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectTools(Software&Tools)/CalculatorstoaccessMTTFcalculatorsbyproduct.3.RefertoAN1955,ThermalMeasure
