利用Pd催化合成单晶GaN纳米线的光学特性.pdf

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1、物理化学学报(WuliHuaxueXuebao)FebruaryActaPhys．一Chim．Sin．，2010，26(2)：507—510507【Article]www．whxb．pku．edu．cn利用Pd催化合成单晶GaN纳米线的光学特性郭永福薛成山石锋庄惠照刘文军孙海波曹玉萍(山东师范大学半导体研究所，济南250014)摘要：基于金属元素钯具有的催化特眭，采用射频磁控溅射方法，在Si(1l1)衬底上沉积Pd：GazO。薄膜，然后在950oC下对薄膜进行氨化，制备出大量GaN纳米线．采用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透

2、射电子显微镜(HRTEM)等技术手段对样品的结构、形貌和成分进行分析．结果表明，制备的样品为具有六方纤锌矿结构的单晶GaN纳米线，直径在20～60am范围内，长度为几十微米，表面光滑无杂质，结晶质量较高．用光致发光光谱对样品的发光特性进行测试，分别在361．1、388．6和426．3am处出现三个发光峰，且与GaN体材料相比近带边紫外发光峰发生了较弱的蓝移．对GaN纳米线的生长机制也进行了简单的讨论．关键词：纳米线；GaN；溅射；光学特性；钯催化；单晶中图分类号：0644；TN649OpticalPropertiesofSingle-CrystalGaNNanowiresS

3、ynthesizedbyPdCatalysisGUOYong—FuXUECheng—ShanSHIFengZHUANGHui—ZhaoLIUWen--JunSUNHai··BoCAOYu--Ping(InstituteofSemiconductors,ShandongNormalUniversity，Jinan250014，PR．China)Abs~act：Basedonthecatalyticpropertyofpalladium，GaNnanowireswerefabricatedbyammoniatingPd：Ga20~thinfilmsat950℃．whichwer

4、edepositedontoaSi(1l1)substratebyradiofrequency(RF)magnetronsputtering．Scanningelectronmicroscopy(SEM)，X—raydiffraction(XRD)，transmissionelectronmicroscopy(TEM)，andhigh-resolutiontransmissionelectronmicroscopy(HRTEM)wereusedtocharacterizethestructure，morphology，andcompositionofthesamples．R

5、esultsrevealthatthenanowiresalesingle—crystalGaNwithahexagonalwurtzitestructureandtheyhavediametersrangingfrom20to60nmwithlengthsofuptoseveraltensofmicrometers．Moreover，mostoftheGaNnanowireshaveasmoothsurfacewithoutanyimpuritiesandareofhighcrystalqualit)，．Theopticalpropertiesofthesampleswe

6、remeasuredbyphotolurninescencespectroscopyandthreeemissionbandswithpeaksat361．1，388．6，and426．3nmwereobserved．Additionally，thebandgapUVlightemissionhasaweakblueshiftcomparedtothebulkGaN．Webrieflydiscussthegrowthmechanismoftl1eGaNnanowires．KeyWords：Nanowires；GaN；Sputering；Opticalproperty；Pdc

7、atalysis；SinglecrysmlGaNisapromisingcandidateforthefabricationofoptoelec—beendevotedtothesynthesis，characterization，andapplicationtronicdevicesandhightemperature／powerelectronicdevicesofGaNnanostructures．Variousapproacheshavebeendevel—duetoitsdirectwjde—bandga