晶片的来料检验.ppt

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1、PCissueinspectionrequisitionBoxLabelDevicetypeLotnoCustomernameQuantityVisualSamplePackingconditionWaferQtyAnydamage400x–100xDimensionThicknessInkthicknessCompleteInspectionReportsIncomingWaferInspection–PQI004Chipoutsonedgeofdieshallnotpenetrateintoanyactivecircuitarea.No

2、te:Activecircuitareaisdefinedasfromoutsideedgeofthebondpadsinward,exceptwherethereisanactivelineinthedesignlocatedbeyondtheoutsideedgeofthebondpadsCracks裂縫碎片邊緣不可穿透線路活性的採納報廢Cracksshallnotbelongerthan1.0milinsideactivecircuitareathatpointstowardoperatingmetalorfunctionalcircu

3、itelement.裂縫不可超過限度機能線路組成Cracksthatdonotpointtowardoperatingmetalorfunctionalcircuitelementsshallnotexceed5.0milsinlength.(Silicon&GaAsDie)裂縫指向不線路活性的不可超過限度Discolorationinglassivationouterlayerisharmlessandshallbeacceptable,providingitisnotobscuringanyotherdamage.Thereshallbe

4、nocorrosioninmetallization,oranyotherlayers.Metallizationhavinganylocalizeddiscolorationshallbecloselyexaminedandshallberejected,unlessitisdemonstratedtobeaharmlessfilm,glassivationinterface,orothernon-obscuringeffects.DiscolorationorCorrosion變色腐蝕狀態玻璃鈍化ThereshallbenoConduct

5、ive(opaque)ForeignMaterialonthetopofunglassivateddiethatislargeenoughtobridgetwoormoreadjacent metallizationareas,andthatcannotberemovedContaminationorForeignmaterial混淆外來料子不透明橋梁ContaminationorForeignmaterialThereshallbenoconductive(opaque)ForeignMaterialunderthetopglassivat

6、ionlayerofthediethatislargeenoughtobridgetwoormoreadjacentmetallizationareasThereshallbenoattachedorembeddedmaterialindiethatbridgestwoactivecircuitelements.GaAs:Thereshallbenoattachedorembeddedmaterialindiethatreducesspacingoftwoactivecircuitelementsbygreaterthan50percent

7、.Silicon:Thereshallbenoattachedorembeddedmaterialindiethatdoesnotprovideavisiblelineofseparationbetweentwoactivecircuitelements.附加在...深留料子Thereshallbenoliquiddrops,chemicalstains,inkorphotoresistontopofunglassivatedareasthatbridgestwoactivecircuitelements.(Liquiddrops,chem

8、icalstains,inkorphotoresistontopofglassivatedportionofthedieareacceptable).液體水滴化學污