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1、DTS3401P-Channel30-V(D-S)MOSFETPRODUCTSUMMARYFEATURESa,b•Halogen-freeOptionAvailableVDS(V)RDS(on)(Ω)ID(A)Qg(Typ.)®•TrenchFETPowerMOSFET0.088atVGS=-10V-2.7-304.1nCRoHS0.130atVGS=-4.5V-2.2APPLICATIONSCOMPLIANT•LoadSwitchforPortableDevicesTO-236(SOT-23)
2、SG13DGS2TopViewDDTS3401P-ChannelMOSFETABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS-30VGate-SourceVoltageVGS±20TC=25°C-3.5TC=70°C-2.8ContinuousDrainCurrent(TJ=150°C)a,bIDTA=25°C-2.7a,bTA=70°C-2.2a,bA
3、PulsedDrainCurrent(10µsPulseWidth)IDM-12TC=25°C-1.5ContinuousSource-DrainDiodeCurrenta,bISTA=25°C-0.91a,bTC=25°C1.8TC=70°C1.14MaximumPowerDissipationa,bPDWTA=25°C1.1a,bTA=70°C0.7a,bOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CSoldering
4、Recommendations(PeakTemperature)c260THERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambienta,ct≤5sRthJA90115°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF5570Notes:a.SurfaceMountedon1"x1"FR4board.b.t=5s.c.MaximumunderS
5、teadyStateconditionsis166°C/W.1DTS3401SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=-250µA-30VVDSTemperatureCoefficientΔVDS/TJ-32ID=-250µAmV/°CVGS(th)TemperatureC
6、oefficientΔVGS(th)/TJ4.5Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1-3VGate-SourceLeakageIGSSVDS=0V,VGS=±20V-100nAVDS=-30V,VGS=0V-1ZeroGateVoltageDrainCurrentIDSSµAVDS=-30V,VGS=0V,TJ=55°C-10On-StateDrainCurrentaID(on)VDS≤5V,VGS=-10V-6AVGS=-1
7、0V,ID=-3.5A0.0730.088Drain-SourceOn-StateResistanceaRDS(on)ΩVGS=-4.5V,ID=-2.5A0.1100.138ForwardTransconductanceagfsVDS=-10V,ID=-3.5A7SDynamicbInputCapacitanceCiss340OutputCapacitanceCossVDS=-15V,VGS=0V,f=1MHz67pFReverseTransferCapacitanceCrss51TotalG
8、ateChargeQg4.16.2Gate-SourceChargeQgsVDS=-15V,VGS=-4.5V,ID=-2.5A1.3nCGate-DrainChargeQgd1.8GateResistanceRgf=1MHz10ΩTurn-OnDelayTimetd(on)4060RiseTimetrVDD=-15V,RL=15Ω4060Turn-OffDelayTimetd(off)ID≅-1A,VGEN=-4.5V,Rg=1Ω2040FallTimetf1730nsTurn-OnDelay
