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1、DTS3401AP-Channel30-V(D-S)MOSFETFEATURESPRODUCTSUMMARY•Halogen-freeAccordingtoIEC61249-2-21VDS(V)RDS(on)(Ω)I(A)a,eQg(Typ.)DefinitionD0.053atV=-10V-5.6•TrenchFET®PowerMOSFETGS-307nC•100%RgTested0.070atVGS=-4.5V-4.6•ComplianttoRoHSDirective2002/95/ECAPPLICATIONS•LoadSwitchTO
2、-236•NotebookAdaptorSwitch(SOT-23)•DC/DCConverterSG13DS2GTopViewDTS3401ADP-ChannelMOSFETABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS-30VGate-SourceVoltageVGS±20TC=25°C-5.6TC=70°C-4.7ContinuousDrainCurrent(TJ=150°C)IDb,cTA
3、=25°C-4.2TA=70°C-3.3b,cAPulsedDrainCurrentIDM-25TC=25°C-2.1ContinousSource-DrainDiodeCurrentISTA=25°C-1b,cTC=25°C2.5TC=70°C1.6MaximumPowerDissipationPDWTA=25°C1.25b,cTA=70°C0.8b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CTHERMALRESISTANCERATINGSParameterS
4、ymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,dt≤5sRthJA75100°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF4050Notes:a.BasedonTC=25°C.b.SurfaceMountedon1"x1"FR4board.c.t=5s.d.MaximumunderSteadyStateconditionsis166°C/W.e.PackageLimited.1DTS3401ASPECIFICATIONSTJ=25°
5、C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=-250µA-30VVDSTemperatureCoefficientΔVDS/TJ-19ID=-250µAmV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ4.4Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1.2-2
6、.5VGate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nAVDS=-30V,VGS=0V-1ZeroGateVoltageDrainCurrentIDSSµAVDS=-30V,VGS=0V,TJ=55°C-5On-StateDrainCurrentaID(on)VDS≤-5V,VGS=-10V-25AVGS=-10V,ID=-4.2A0.0370.053Drain-SourceOn-StateResistanceaRDS(on)ΩVGS=-4.5V,ID=-3.2A0.0620.070ForwardTran
7、sconductanceagfsVDS=-15V,ID=-4.2A10SDynamicbInputCapacitanceCiss590OutputCapacitanceCossVDS=-15V,VGS=0V,f=1MHz115pFReverseTransferCapacitanceCrss93VDS=-15V,VGS=-10V,ID=-4.2A13.621TotalGateChargeQg711nCGate-SourceChargeQgsVDS=-15V,VGS=-4.5V,ID=-4.2A2.3Gate-DrainChargeQgd3.2
8、GateResistanceRgf=1MHz1510ΩTurn-OnDelayTimetd(on)3045RiseTimetrVDD=-15V,RL=4.5Ω2538Turn-O
