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1、DTS2319P-Channel20-V(D-S)MOSFETPRODUCTSUMMARYFEATURES•Halogen-freeAccordingtoIEC61249-2-21VDS(V)RDS(on)(Ω)ID(A)Qg(Typ.)Definition0.018atVGS=-4.5Va•TrenchFET®PowerMOSFET-6-200.026atVGS=-2.5V-6a20nC•100%RgTested•BuiltinESDProtectionwithZenerDiode0.065atVGS=-1.8V-4•
2、TypicalESDPerformance:1800V•ComplianttoRoHSDirective2002/95/ECSAPPLICATIONS•PortableDevices-LoadSwitch-BatterySwitch-ChargerSwitchGRDP-ChannelMOSFETABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS-20VGate-SourceVolt
3、ageVGS±12TC=25°C-6aTC=70°C-6aContinuousDrainCurrent(TJ=150°C)IDTA=25°C-5b,cTA=70°C-4.1b,cAPulsedDrainCurrentIDM-50TC=25°C-6aContinuousSource-DrainDiodeCurrentISTA=25°C-2.9b,cTC=25°C19TC=70°C12MaximumPowerDissipationPDWTA=25°C3.5b,cTA=70°C2.2b,cOperatingJunctionan
4、dStorageTemperatureRangeTJ,Tstg-55to150°CSolderingRecommendations(PeakTemperature)d,e260THERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,et≤5sRthJA2836°C/WMaximumJunction-to-Case(Drain)SteadyStateRthJC5.36.5Notes:a.Packagelimit
5、ed.b.SurfaceMountedon1"x1"FR4board.c.t=5s.d.ReworkConditions:manualsolderingwithasolderingironisnotrecommendedforleadlesscomponents.e.MaximumunderSteadyStateconditionsis80°C/W.1DTS2319SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.
6、Max.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=-250µA-20VVDSTemperatureCoefficientΔVDS/TJ-12ID=-250µAmV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ3Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-0.5-1.2VVDS=0V,VGS=±12V±20Gate-SourceLeakageIGSSVDS=0V,V
7、GS=±4.5V±0.5µAVDS=-20V,VGS=0V-1ZeroGateVoltageDrainCurrentIDSSVDS=-20V,VGS=0V,TJ=55°C-10On-StateDrainCurrentaID(on)VDS≤-5V,VGS=-4.5V-20AVGS=-4.5V,ID=-5.6A0.0150.018Drain-SourceOn-StateResistanceaRDS(on)VGS=-2.5V,ID=-5.3A0.0210.026ΩVGS=-1.8V,ID=-2.5A0.0400.065Forw
8、ardTransconductanceagfsVDS=-10V,ID=-5.6A35SDynamicbTotalGateChargeVDS=-10V,VGS=-8V,ID=-5A5075Qg2030Gate-SourceChargenCQgsVDS=-10V,VGS=-4.5V,ID=-5A3.3Gate-Drain
