DTS7001品牌授权规格书.pdf

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1、DTS7001P-Channel60V(D-S)MOSFETFEATURESPRODUCTSUMMARY•Halogen-freeAccordingtoIEC61249-2-21VDS(V)RDS(on)()VGS(th)(V)ID(mA)Definition•TrenchFET®PowerMOSFET-605atVGS=-10V-1to-3-130•High-SideSwitching•LowOn-Resistance:5•LowThreshold:-2V(typ.)•FastSwtichingSpeed:20ns(typ.)•LowInputCapacitance:20pF(typ.)

2、TO-236•1200VESDProtectionS(SOT-23)•ComplianttoRoHSDirective2002/95/ECG1APPLICATIONSG3D•Drivers:Relays,Solenoids,Lamps,Hammers,Display,S2Memories,Transistors,etc.•BatteryOperatedSystemsTopView•PowerSupplyConverterCircuitsDTS6401D•Solid-StateRelaysP-ChannelMOSFETBENEFITS•EaseinDrivingSwitches•LowOffse

3、t(Error)Voltage•Low-VoltageOperation•High-SpeedCircuits•EasilyDrivenwithoutBufferABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS-60VGate-SourceVoltageVGS±20TA=25°C-130ContinuousDrainCurrentaIDTA=100°C-105mAPulsedDrainCurrentbIDM-800TA=25°C350PowerDiss

4、ipationaPDmWTA=100°C140MaximumJunction-to-AmbientaRthJA350°C/WOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CNotes:a.SurfacemountedonFR4board.b.Pulsewidthlimitedbymaximumjunctiontemperature.1DTS7001SPECIFICATIONSTA=25°C,unlessotherwisenotedLimitsParameterSymbolTestConditionsMin.Typ.aMax

5、.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=-10µA-60VGate-ThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1-3VDS=0V,VGS=±20V±10µAVDS=0V,VGS=±10V±200Gate-BodyLeakageIGSSVDS=0V,VGS=±10V,TJ=85°C±500VDS=0V,VGS=±5V±100nAVDS=-60V,VGS=0V-25ZeroGateVoltageDrainCurrentIDSSVDS=-60V,VGS=0V,TJ=85°C-250aVGS=-10

6、V,VDS=-4.5V-50On-StateDrainCurrentID(on)mAVGS=-10V,VDS=-10V-600VGS=-4.5V,ID=-25mA10Drain-SourceOn-ResistanceaRV=-10V,I=-500mA5DS(on)GSDVGS=-10V,ID=-500mA,TJ=125°C9ForwardTransconductanceagV=-10V,I=-100mA80mSfsDSDDiodeForwardVoltageVSDIS=-200mA,VGS=0V-1.4VDynamicTotalGateChargeQg1.7VDS=-30V,VGS=-15V

7、Gate-SourceChargeQgs0.26nCID-500mAGate-DrainChargeQgd0.46InputCapacitanceCiss23VDS=-25V,VGS=0VOutputCapacitanceCoss10pFf=1MHzReverseTransferCapacitanceCrss5SwitchingbTurn-OnTimetd(on)VDD=-25V,RL=150