资源描述：
《A comprehensive model of PMOS NBTI degradation.pdf》由会员上传分享，免费在线阅读，更多相关内容在应用文档-天天文库。
1、MicroelectronicsReliability45(2005)71–81www.elsevier.com/locate/microrelAcomprehensivemodelofPMOSNBTIdegradationa,*bM.A.Alam,S.MahapatraaAgereSystems,Allentown,PA,USAbDepartmentofElectricalEngineering,IIT,Bombay,IndiaReceived13November2003;receivedinrevisedform31March2004Availableonline3Augus
2、t2004AbstractNegativebiastemperatureinstabilityhasbecomeanimportantreliabilityconcernforultra-scaledSiliconICtechnologywithsignificantimplicationsforbothanaloganddigitalcircuitdesign.Inthispaper,weconstructacomprehensivemodelforNBTIphenomenawithintheframeworkofthestandardreaction–diffusionmodel
3、.Wedemonstratehowtosolvethereaction–diffusionequationsinawaythatemphasizesthephysicalaspectsofthedeg-radationprocessandallowseasygeneralizationoftheexistingwork.Wealsoaugmentthisbasicreaction–diffusionmodelbyincludingthetemperatureandfield-dependenceoftheNBTIphenomenasothatreliabilityprojections
4、canbemadeunderarbitrarycircuitoperatingconditions.Ó2004PublishedbyElsevierLtd.1.IntroductionthePMOSbasedsystems[6],andtherebyreducedtheimportanceofNBTIforthosespecificsystems.However1.1.Backgroundotherprocessingandscalingchanges,introducedoverthelast30yearstoimprovedeviceandcircuitperfor-Thein
5、stabilityofPMOStransistorparameters(e.g.,mances,haveinadvertentlyreintroducedNBTIasathresholdvoltage,transconductance,saturationcurrent,majorreliabilityconcernformainstreamanalogandetc.)undernegative(inversion)biasandrelativelyhighdigitalcircuits[7–17].Thesechangesinclude:temperaturehasbeenkn
6、owntobeareliabilityconcernsincethe1970s[1–4],andmodelingefforttounderstand(a)IntroductionofCMOSinearly1980sthathasmadethisisalsojustasold[5].Namednegativebiastem-PMOSandNMOSdevicesequallyimportantforICperatureinstability(NBTI)inanalogytotheNaþin-designs.ducedbiastemperatureinstability(BTI)that
7、caused(b)Introductionofdualpoly-processthathasallowedsimilarshiftinthresholdvoltagesunderoperatingcon-replacementofburiedchannelPMOSdeviceswithditions,theoriginaltechnologicalmotivationforNBTIsurfacechannelPMOSdevices.Althoughthecircuitstudie
