Materials Aspects of Microdevices

Materials Aspects of Microdevices

ID:41191386

大小:3.02 MB

页数:89页

时间:2019-08-18

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1、M10:DeviceMaterialsandNanotechnologymgb20061.THEAIMOFTHECOURSETointroducethematerialsandprocessesofdevicefabrication.Toprovideanunderstandingofwhyparticularmaterialsareusedindevices.Toexplainhowdevicesoperateinpracticetooutlinethepotentiallimitsofcurrenttechnology.Todescribetheimpor

2、tantconceptsandtechniquesofnanotechnology.1M10:DeviceMaterialsandNanotechnologymgb20062.INTRODUCTION2.1MICROELECTRONICMATERIALSMaterialsnotchosenindependently2.2MICROFABRICATIONATTRIBUTESMicroelectronicdeviceprocessingissuccessfulbecauseitcombines3keyfeatures2.2.1Batchprocessing•Rep

3、eatedfabricationofidenticalcomponents•Permitsserialproductionifonedieperbatch•Parallelprocessingifmultipledies.2.2.2AccuracyIfeconomicsarenotaconsiderationarbitraryaccuracycanbeachieved.Generallylimitedtoaffordableaccuracy-determinedbymarketrequirements.2.2.3Miniaturisation•DensityE

4、arliestintegratedmemories-ferriterings210mm2perbit-2560mfor256Mbmemory–16acresfor4Gb20.5µm2perbit-1cmfor256Mbmemory•Speedspeed=1/size•Powerconsumption<0.01mW/transistor-powerstill>20Wforadvancedµ-processors.2M10:DeviceMaterialsandNanotechnologymgb20062.3BASICSEMICONDUCTORDEVICESTRUC

5、TURESANDARCHITECTURES2.3.1TheFieldEffectTransistorn-MOSfieldeffecttransistorMetalOxideSemiconductorFETsourcegatedrainSimplestructureMetalŠSinglesemiconductorlayer(wafer)n+n+ŠOxideformedbyOxidethermalgrowthzerop-np-nŠPropertiesofmetalvoltagejunctionjunctionirrelevantpŠScalableReli

6、esontheinversioneffectŠCreatesconductingchannelundergate+vee-e-e-e-e-e-e-e-ŠLinkssourceanddrainvoltageFordigitalapplications-(inverted)justaswitchpRealtransistor3-DstructureMadeofreal(ratherthanideal)materials2.3.2MOS/CMOSTechnology•ThegenericFET-baseddevicetechnology.•Simplermod

7、els3M10:DeviceMaterialsandNanotechnologymgb2006•LowestpowerconsumptionFabricationProcessesrequiredforprogressfrombarewafertocompleteddevice:ŠLithographyŠDopingŠEtchingŠDepositionŠOxidationCreates:ŠReproducibledeviceŠMultilevelstructure2.4STRATEGYEvolution:norevolutionssince1960.pr

8、ocessandmaterialsde

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