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1、DE-EE0007361Low-CostIII-VPVMaterialsbyCl-CSVTBoettcherFinalReportProjectTitle:Low-CostIII-VPhotovoltaicMaterialsbyChlorideVaporTransportDepositionUsingSafeSolidPrecursorsProjectPeriod:6/15/16–10/31/17ProjectBudget:$225,000+$56,486costshareSubmissionDate:4/18/18Recipient:ShannonBoettcher
2、,UniversityofOregonAddress:Dept.ChemistryandBiochemistry1253UniversityofOregonEugene,OR97403AwardNumber:DE-EE0007361ProjectTeam:UniversityofOregon,LawrenceBerkeleyNationalLaboratoryMolecularFoundry,MalachiteTechnologiesInc.Contacts:ShannonBoettcherAssociateProfessor,ChemistryPhone:541-3
3、46-2543Fax:541-346-4643Email:swb@uoregon.eduShaulAloniStaffScientistLawrenceBerkeleyLabsPhone:510-486-7452Email:saloni@lbl.govRobertWeissMalachiteTechnologiesPhone:415-307-4598Email:rweiss@malachitetech.comPage1of24DE-EE0007361Low-CostIII-VPVMaterialsbyCl-CSVTBoettcherExecutiveSummary:S
4、i-basedphotovoltaicdevicesdominatethemarket.Asphotovoltaic(PV)manufacturingcostshaveplummeted,technologieswhichincreaseefficiencyhavebecomecritical.SicellefficienciesarenearingtheoreticallimitsandSi-basedPVmodulesareunlikelytoreachthe25-30%efficiencyrange.1TheuseofIII-Vsemiconductorsisa
5、nobvioustechnicalsolutiontoimproveefficiency,especiallyiftheycanbeintegrateddirectlywithexistingSitechnologyastandems.Highcoefficientsoflightabsorptionalongwithtunablebandgapsandlatticeconstantshaveresultedinrecordconversionefficienciesforbothone-sunandconcentratorPVapplications.GaAs,fo
6、rexample,hasbeenusedtomanufacturesingle-junctionphotovoltaicswithworld-recordefficienciesof28.8%atonesun.2However,costsforIII-Vsmustbedramaticallyreducedtoproducecost-effective,high-efficiencyPVsolutions.III-Vcostsarecontrolledbytwofactors:semiconductorgrowthandthesubstrate.III-Vgrowthi
7、sdominatedtodaybymetal-organicvaporphaseepitaxy(MOVPE)withalesserroleplayedbymolecularbeamepitaxy(MBE).MOVPEcostsarehighduetotheexpenseandlowutilization(~30%)ofprecursors,modestgrowthrates(~100nmmin-1),equipmentcomplexity,andsafetyinfrastructureneededtohandletoxic,pyrophoricgas
