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1、MaterialsScienceandEngineeringA483484(2008)464468ThermalfatigueperformanceofSnAgCuchip-scalepackagewithunderfillBo-InNoha,Bo-YoungLeeb,Seung-BooJunga,∗aSchoolofAdvancedMaterialsScienceandEngineering,SungkyunkwanUniversity,300Cheoncheon-dong,Jangan-gu,Suwon440-746,
2、RepublicofKoreabDepartmentofAerospaceandMechanicalEngineering,HankukAviationUniversity,200-1Hwajeon-dong,Deokyang-gu,Koyang412-791,RepublicofKoreaReceived6June2006;receivedinrevisedform5December2006;accepted10December2006AbstractThethermalfatiguepropertiesoftheso
3、lderjointswithvariousunderfillswereevaluatedbythermalshocktest.Thethermalfatiguecrackinitiatedatthebottomedgesofinterfacebetweenthe(Ni,Cu)3Sn4intermetalliccompoundslayerandtheNi3Playerandspreadtoalltheinterfaceswithincreasingnumberofthermalshockcycles.Thethermalfa
4、tiguepropertiesofpackagewithunderfill,whichhasthehigherglass-transitiontemperature(Tg)andlowercoefficientofthermalexpansion(CTE)werebetterthanthoseofthepackagewithunderfillhavingthelowerTgandhigherCTEvalue.©2007ElsevierB.V.Allrightsreserved.Keywords:Chip-scalepackag
5、e;Underfill;Thermalshock;Glass-transitiontemperature;Coefficientofthermalexpansion1.Introductionunderfill.Anunderfillisusedtofillthegapbetweenthechipandthesubstratethroughacapillaryflowprocess.Whencured,Thedevelopmentofintegratedcircuit(IC)packaginghastheunderfillcanser
6、vetheexcellentfunctionssuchasreductionbeenpushedtowardtoasmaller,thinner,lighterandhigherden-ofpackagestressescausedbymismatchinthecoefficientofsitypackageconfiguration[1].Therefore,theballpitchbecomesthermalexpansion(CTE)betweensolderandpackagingmate-finer,thebotht
7、hepadandballarereducedinsize.Ball-gridrials[3,710].Inthermalcyclingtestforreliabilityiscommonlyarray(BGA)packageandchip-scalepackage(CSP)arenowusedtoacceleratecreepdamageinthepackage[11].widelyusedformanyelectronicapplicationsincludingportableTherefore,thethermal
8、fatigueperformanceofSnAgCuandtelecommunicationproducts[15].CSPprovidesexcellentCSPwithvariousunderfillswasevaluatedunderthermalshock.electricalperformance,highi