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1、MicroelectronicsReliability50(2010)923–927ContentslistsavailableatScienceDirectMicroelectronicsReliabilityjournalhomepage:www.elsevier.com/locate/microrelReliabilitymodelingonaMOSFETpowerpackagebasedonembeddeddietechnologya,b,*bbbbDaoguoYang,MartienKengen,W.G.M.Peels,DavidHeyes
2、,W.D.vanDrielaGuilinUniversityofElectronicsTechnology,Gulin,ChinabNXPSemiconductors,Gerstweg2,6534AENijmegen,TheNetherlandsarticleinfoabstractArticlehistory:EmbeddingofdiscretesemiconductorsintosubstrateshastheadvantagesofachievinghighdegreeofReceived13November2009miniaturizati
3、on,goodelectricalperformanceandpossiblelowcost.AMOSFETpowerpackagebasedReceivedinrevisedform27February2010ontheembeddeddietechnologywasdevelopedandthedemonstratorswerebuilt.ToreducecostandAvailableonline3April2010time-to-market,thermo-mechanicalvirtualprototypingisappliedtosupp
4、ortthepackagedevelopment.2Dand3DparametricFEmodelswereestablishedtoconductnumericalsimulationstoinvestigatethethermo-mechanicalreliabilityperformanceunderpackagingprocessesandtestconditions.Thepackagedesignandmaterialvariations,suchasthethicknessesoftheCulayerandtheresinintheRC
5、Cfoil,theBondLineThickness(BLT),thethicknessandmaterialpropertiesofprepreg,viadimensionsandvia-fill-ing,wereincludedintheparametricmodels.Therootcausefordiecracking,delaminationbetweentheinterfacedie/RCCfoil,andcrackingofCuviaswereanalyzedbasedonthesimulationresults.Verificationo
6、fthemodelingresultswasconductedthroughcomparisonwiththetestresults.TheresultsindicatethatthepredictionfromtheFEmodelingmatchesreasonablywellwiththetestresults.Ó2010ElsevierLtd.Allrightsreserved.1.Introductionpotentialsoflowcostandhighdegreeofminiaturization(lowprofile).Sincethel
7、astfewyears,thefocusinmicroelectronicsisgradu-Processyieldandreliabilityissueshavebeenbelievedtobetheallychangingfromfront-endtopackaging.Moreaddedvaluesaremajorbottlenecksinthedevelopmentofembeddeddiepackages.putintopackages,whereadvancedpackagingtechnologiessuchasAchallengefo
8、rallembeddingtechnologiesistheprocessyieldinsystem-in-
