cmos(1.0um)工艺流程

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1、1.0umCMOSPROCESSFLOWINTRODUCTION1.0umCMOSPROCESSFLOWINTRODUCTION1.WaferStartPTYPE<100>,8-12OHM-CM2.Waferlasermark3.Scrubbercleanafterwaferlasermark4.C1clean5.Padoxide(1000degC;Tox:350ang)6.Si3N4deposition(Thickness:1500ang)P-TYPE1.0umCMOSPROCESSFLOWINTRODUCTION7.RCAC1

2、clean8.AfterSi3N4depositioninspection9.PRcoat(JSR-7980;TK=1.22u;SVG=111;TEL=1)10.Nwellalignmentexposure(192)P-TYPEPR1.0umCMOSPROCESSFLOWINTRODUCTION11.DevelopPR(MF320,NON-CD;JSR-7980;SVG=77;TEL=7)12.ADIcheck13.Hard-bake(1180C35min)14.Si3N4dry-etch(490ABC:Si3N4)15.Padt

3、hickness-measure(afterSi3N4etch)16.N-Wellimplant(P31/100keV/1.0E13)P-TYPEPRN-WELLP311.0umCMOSPROCESSFLOWINTRODUCTION17.Ashing(PSCPartial-strip:poly,codeimp)18.Photoresiststripping(H2SO4)19.After-etchinspection20.Standardclean21.Welloxidation(5F1,2,4/6F1;980DEGC;Tox:60

4、00ang)22.BOE(BufferOxideEtching)10:1Wet-etch(BOE7,BOE9:30sec)P-TYPEPRN-WELL1.0umCMOSPROCESSFLOWINTRODUCTION23.Si3N4-1Stripping(HotH3PO4,lowratio,PCS.X2)24.Padthickness-measure(AfterSi3N4Strip.Tox=350)25.After-etchinspection26.P-Wellimplant(IMP-MED)(B11/100keV/6.5E12)2

5、7.CRclean(secondH2SO4tank)28.C1clean29.Welldiffusion(1150degC;2200ang;VD=1.5hrs)P-TYPEN-WELLB11P-WELL1.0umCMOSPROCESSFLOWINTRODUCTION30.BOE10:1Wet-etch(BOE7,BOE9:12min0sec)31.After-etchinspection32.C1clean33.Padoxide(1000degC;Tox:350ang)34.Si3N4deposition(Thickness:15

6、00ang)35.RCAC1cleanP-TYPEN-WELLP-WELL1.0umCMOSPROCESSFLOWINTRODUCTION36.AfterSi3N4depositioninspection37.PRcoat(V3;TK=1.26u;SVG=141)38.Si3N4(120)alignexposure(Si3N41500:Padoxide350)39.DevelopPR(MF320;Si3N4;V3;SVG=31;TEL=3)40.Si3N4ADICDMEAS(Spec+-0.12)(1.0CMOS)SNDM12C1

7、(Spec=1.6+-0.12)41.ADICheck42.HardbakeP-TYPEN-WELLP-WELL1.0umCMOSPROCESSFLOWINTRODUCTION43.Si3N4Dry-etch(490ABC:Si3N4)44.Padthickness-measure(afterSi3N4-etch)45.Ashing(PSCPartial-strip:poly,codeimp)46.Photoresiststripping(H2SO4)47.After-ecthinspection48.Si3N4AEI-CD(15

8、00/350/5X(V3):S60)(Spec=1.6+-0.15(1.6))P-TYPEN-WELLP-WELL1.0umCMOSPROCESSFLOWINTRODUCTION49.PRcoat(JSR-7980;TK=1.6u;SVG=221;