CMOS工艺流程讲解.ppt

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1、WaferFabricationProcessTechnologyCMOSContent0.5umCMOSprocessflow&crosssection0.18umCMOSprocessflow&crosssectionPCMintroductionCMOSStartingwithasiliconwaferCrossSectionoftheSiliconWaferMagnifyingtheCrossSectionCMOSn/p-wellFormationGrowThinOxideDepositNitrideDepositResistsilicon

2、substrateUVExposureDevelopResistEtchNitriden-wellImplantRemoveResistCMOSn/p-wellFormationsiliconsubstrateGrowOxide(n-well)RemoveNitridep-wellImplantRemoveOxideTwin-wellDrive-inp-welln-wellRemoveDrive-InOxidesiliconsubstratep-welln-wellCMOSLOCOSIsolationGrowThinOxideDepositNitr

3、ideDepositResistUVExposureDevelopResistEtchNitrideRemoveResistCMOSLOCOSIsolationsiliconsubstratep-welln-wellDepositResistUVExposureDevelopResistFieldImplantBRemoveResistGrowFieldOxideFoxRemoveNitrideRemoveOxidesiliconsubstratep-welln-wellGrowScreenOxideCMOSTransistorFabricatio

4、nVtImplantDepositResistUVExposureDevelopResistPunchthroughImplantRemoveResistRemoveOxideFoxsiliconsubstratep-welln-wellGrowGateOxideCMOSTransistorFabricationDepositPolySiPolySiImplantpolySipolySiDepositResistUVExposureDevelopResistEtchPolySiRemoveResistFoxsiliconsubstratep-wel

5、ln-wellCMOSTransistorFabricationDepositThinOxideDepositResistUVExposureDevelopResistn-LDDImplantRemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp-LDDImplantRemoveResistDepositSpacerOxideEtchSpacerOxideFoxpolyS

6、ipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistn+S/DImplantn+n+RemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp+S/DImplantp+p+RemoveResistFoxpolySipolySin+n+si

7、liconsubstratep-welln-wellCMOSContacts&InterconnectsDepositBPTEOSBPTEOSBPSGReflowPlanarizationEtchbackDepositResistUVExposureDevelopResistContactEtchbackRemoveResistFoxpolySipolySin+n+p+p+siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepostMetal1Metal1DepositResistUVEx

8、posureDevelopResistEtchMetal1RemoveResistFoxpolySipolySip+p+n