CMOS工艺流程演示

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1、WaferFabricationProcessTechnologyCMOSCMOSStartingwithasiliconwaferCrossSectionoftheSiliconWaferMagnifyingtheCrossSectionCMOSn/p-wellFormationGrowThinOxideDepositNitrideDepositResistsiliconsubstrateUVExposureDevelopResistEtchNitriden-wellImplantRemoveResistCMOSn/p-wel

2、lFormationsiliconsubstrateGrowOxide(n-well)RemoveNitridep-wellImplantRemoveOxideTwin-wellDrive-inp-welln-wellRemoveDrive-InOxidesiliconsubstratep-welln-wellCMOSLOCOSIsolationGrowThinOxideDepositNitrideDepositResistUVExposureDevelopResistEtchNitrideRemoveResistCMOSLOC

3、OSIsolationsiliconsubstratep-welln-wellDepositResistUVExposureDevelopResistFieldImplantBRemoveResistGrowFieldOxideFoxRemoveNitrideRemoveOxidesiliconsubstratep-welln-wellGrowScreenOxideCMOSTransistorFabricationVtImplantDepositResistUVExposureDevelopResistPunchthroughI

4、mplantRemoveResistRemoveOxideFoxsiliconsubstratep-welln-wellGrowGateOxideCMOSTransistorFabricationDepositPolySiPolySiImplantpolySipolySiDepositResistUVExposureDevelopResistEtchPolySiRemoveResistFoxsiliconsubstratep-welln-wellCMOSTransistorFabricationDepositThinOxideD

5、epositResistUVExposureDevelopResistn-LDDImplantRemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp-LDDImplantRemoveResistDepositSpacerOxideEtchSpacerOxideFoxpolySipolySisiliconsubstratep-welln-wellCMOS

6、TransistorFabricationDepositResistUVExposureDevelopResistn+S/DImplantn+n+RemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp+S/DImplantp+p+RemoveResistFoxpolySipolySin+n+siliconsubstratep-welln-wellCMO

7、SContacts&InterconnectsDepositBPTEOSBPTEOSBPSGReflowPlanarizationEtchbackDepositResistUVExposureDevelopResistContactEtchbackRemoveResistFoxpolySipolySin+n+p+p+siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepostMetal1Metal1DepositResistUVExposureDevelopResist

8、EtchMetal1RemoveResistFoxpolySipolySip+p+n+n+BPTEOSsiliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositIMD1IMD1DepositSOGS