资源描述：
《1980,JSSC80 Accurate analyzes of temperature effects》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。
1、1076IEEEJOURNALOFSOLID-STATECIRCUITS,VOL.SC-15,NO.6,DECEMBER1980quently,hejoinedtheProductEn@eeringGroupasaCircuitEngineelworkingonthedevelopmentofthreecustom,radiation-hardeneddigitalcircuits.Later,hetransferredtotheDeviceGroupoftheEngineeringDepartmen
2、t,Hisassignmentsinthatgroupincludedlinearp-n-pdesign;developmentofcomplementaryfineardeviceprocesses;developmentofprocessesforthefabricationofn-p-n’sandFET’sinamonolithicsubstrate;designofhardenedTTLdevices;anddevelop-mentofa.numberoflinearanddigitalcir
3、cuitsemployingthesepro-cesses,Currently,heistheManageroftheAnalogTechnologyDepart-ment.Hedirectsandparticipatesinthedesignanddevelopmentofnewlineardevicesandprocesses.HisgroupisresponsiblefortheinitialdevicedesignandprocessdevelopmentforrdlHarrisSemicon
4、ductorJamesD.BeasomreceivedtheB.S.(withdis-linearcircuits.Itisalsoresponsibleforpilotwaferfabricationofthesetinction)inengirieeringsciencefromPermsyl-productstoproveyieldsandreliabilitybeforetheyarereleasedforvaniaStateUniversity,UniversityPark,andthepr
5、oduction.HeiscurrentlydevelopingprocessesforthefabricationofM.S.inelectricalengineeringfromtheUniver-high-frequencyandhigh-currentcomplementarylineardevicesandthesityofMichigan,AnnArbor.fabricationofcomplementarybipolarsandFET’sinamonolithicHejoinedHarr
6、isSemiconductorinJuly1966substrate.HeisalsodevelopingaGHzfrequencyrangeMOSICpro-asaSeniorEngineerassignedtoaprocessandcess.Hispatentsinclude:animprovedtieldeffecttransistor,aprocessdevicedevelopmentgroup.Whileamemberofforsimultaneousfabricationofn-p-n’s
7、,p-n-p’s,andMOSdevices,apro-thatgroup,hestudiedthermaloxidesandcessforformingburiedlayerstoreducecollectorresistanceintopdevelopedprocessesforthefabricationofcontacttransistors,andanimprovedsemiconductordevice(quasi-n-channelandp-channelMOSFET’S.Subse-v
8、erticaltransistor).AccurateAnalysisofTemperatureEffectsin/c-l/BECharacteristicswithApplicationtoBandgapReferenceSourcesYANNISP.TSIVIDIS,MEMBER,lEEEAbstract–Theinaccuracyoftheanalysescommonlyusedforpredict-bipolartechnology[1]-[8]
