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1、ThinSolidFilms515(2007)8356–8359www.elsevier.com/locate/tsfIn2O3nanowiresforgassensors:morphologyandsensingcharacterisationa,⁎a,ba,ba,ba,bA.Vomiero,S.Bianchi,E.Comini,G.Faglia,M.Ferroni,ba,bN.Poli,G.SberveglieriaINFM-CNRSENSORLab,ViaValotti9,25133Brescia,I
2、talybDip.diChimicaeFisicaperl’IngegneriaeiMateriali,UniversitàdiBrescia,ViaValotti9,25133Brescia,ItalyAvailableonline20March2007AbstractThinanddenselypackedIn2O3nanowireshavebeensynthesisedonaluminasubstratesviatransportandcondensationmethod,startingfromna
3、noparticlesofindiumorpalladiumascatalystsforthecondensationprocess.Indiumcatalystpromotedwiresgrowthaccordingtovapour–solid(VS)mechanism,whilepalladiumcatalystleadstowiresformationbasedonvapour–liquid–solid(VLS)condensation.Electronmicroscopyandrelateddiff
4、ractionanalysisdemonstratedthatthewiresaremonocrystalline,withatomicallysharpterminationofthelateralsides,andarefreefromextendeddefects.Thesensingpropertiesofnanowiresbundleshavebeentestedtoacetoneusingtheflowthroughtechniqueinthetemperaturerangebetween100
5、and500°C.©2007ElsevierB.V.Allrightsreserved.Keywords:In2O3;Nanowires;Atomicstructure;Gassensors1.Introductioncondensationsiteforthevaporisedprecursor;whenasupersat-uratedsolutionisreached,growthmaterialprecipitatesresultingThesynthesisofone-dimensionalnano
6、structuresinformofinonedimensionalgrowth.nanobelts,nanorods,andnanowireshasstimulatedintensere-In2O3iswidebandgaptransparentsemiconductor(Eg∼searchactivityduetotheirnovelphysicalpropertiesandtheir3.6eV).Itsapplicationasgassensingmaterialinformofpotentialap
7、plicationsinnanotechnology[1–5].thickfilm[16],nanowires[17]andmicrocubes[18]hasbeenNanowiresofmetaloxidesemiconductorshavebeenrecentlyrecentlyinvestigated.SynthesisofIn2O3informofnanowiressynthesised[6];andtheirexceptionallyhighsurface-to-volumeisparticula
8、rlydemandingasdecompositionofIn2O3precursorratio,monocrystallineassembly,andsemiconductingelectricalpowderoccursinthe1400–1500°Ctemperaturerange.Thisbehaviourforeseetheirimplementationinanewclassofgasconditio
