高压沉积非晶硅锗薄膜与在太阳电池上的应用

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1、AbstractFabricatingmulti-junctionsolarcellsisoneofkeystrategiesto1mproVetneconVersionefficiencyofsiliconbasedthinfilmsolarcells·Inthispaper,锄orphoussilicongenllani啪thinfilms，whichcanbeusedasintrinsiclayerofmlddlecell,waspreparedbyRF．PECVDunderhighpressureinordertoachieVeahlghdeposltlonra

2、te．Basedonincreasingdepositrateandlowcostofsourcinggas(ge衄锄eandsilanewasused)，amorphoussilicongermaniumsolarcellsw盯eobtained,meetingmerequirementsoftriple-junctiontandemsolarcell·Themaincon‘ent8areasfollows：．(1)Theoptimizationofamorphoussilicongermaniumthinfilmatlowdepositionrate．一Influe

3、nceofprocessparametersonpropertiesofthinfilmweresystematicallyinvestigatedunderlowpressurecondition．Byadjustinggermaneconcen‘ratlonandRFpower，thegemani啪contentofthinfilmcanbecontrolled·Hydrogendilutloncanimprovetheuniformityofcontentsandmicro-structureaswellasbondmgtom·Thea．SiGematerials

4、weredepositedat0．8一lflds，withgermaniumcontentof40％，Dhotosensitivitylargerthan2×105andopticalgapof1·58eV·a‘SiGefilmdeposltedatlowratec眦beoptimizedoverawiderangeofprocesswindow·(21Theoptimizationofamorphoussilicongermaniumthinfilmunderhj班pressure．Comparedt0mecaseoflowpressure，thedeposition

5、rateofa-SiGethinfilmwasraised衄eetimeshigherbyincreasingpressureandpow盯denslty·I'heinfluencesofge眦aneconcentration，plasmapower，pressure，hydrogendllutionrateandresidenttimeonfilmpropertiesunderhighpressureprocesswasstudled·Themainresultsareconcludedasfollows：(a)MatchinggermaniumcontentandP

6、la8mapower．Over30％germaniumcontentcallsforplasmaPowerlessthan40W．(b)Matchingplasmapowerandgaspressure．3Torrpressurewasprel咐edaccordingwith40Wpower，inordertoavoidionbombardmenttothefilm．fc)Increasinghydrogendilutionwasnecessaryforoptimizingm1∞stmctureandAbstractbondingform．(d)Propertotalf

7、lowratewasusedtoattainproperresidenttimeofgas．Eventually，a-SiGematerialwithopticalgapof1．62eVandphotosensitivitymorethan103wasfabricatedunderhi曲pressurecondition．Withthisprocess，thedepositionratewasenhancedtO3．5·4JXJs．twotimeshigherthanthecaseoflowpressuredeposition．Never