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1、第29卷第11期半导体学报Vol.29No.112008年11月JOURNALOFSEMICONDUCTORSNov.,2008Depositionofp2TypeMicrocrystallineSiliconFilmandItsApplication3inMicrocrystallineSiliconSolarCells1,2,•1311ChenYongsheng,YangShi’e,WangJianhua,LuJingxiao,GaoXiaoyong,111GuJinhua,ZhengWen,andZhaoShangli(1KeyLaboratoryofMaterial
2、Physics,DepartmentofPhysics,ZhengzhouUniversity,Zhengzhou450052,China)(2InstituteofPlasmaPhysics,ChineseAcademyofSciences,Hefei230031,China)(3DepartofMaterialsScienceandEngineering,WuhanInstituteofTechnology,Wuhan430073,China)Abstract:Highlyconductiveboron2dopedhydrogenatedmicrocrystalline
3、silicon(μc2Si:H)filmsandsolarcellsarepreparedbyplasmaenhancedchemicalvapourdeposition(PECVD).Theeffectsofdiboraneconcentration,thicknessandsubstratetemperatureonthegrowthandpropertiesofB2dopedlayersandtheperformanceofsolarcellswithhighdepositedratei2layersareinvestigated.Withtheoptimump2la
4、yerdepositionparameters,ahigherefficiencyof515%isobtainedwith0178nm/sdepositedi2layers.Inaddition,thecarrierstransportmechanismofp2typeμc2Si:Hfilmsisdiscussed.Keywords:boron2dopedμc2Si:Hfilms;Ramancrystallinity;darkconductivity;solarcellsPACC:7280N;7830G;8115HCLCnumber:TN305192Documentcode
5、:AArticleID:025324177(2008)11221302062Experiment1IntroductionBoron2dopedmicrocrystallinelayersweregrownP2typelayersareveryimportanttotheperform2onquartzglassandSnO2/ZnOfilmscoatedglassby[1,2]anceofsiliconthinfilmsolarcells.InordertoconventionalRFPECVDtechnique(13156MHz)inaachieveaperfect2p
6、erformancesolarcell,p2layersmustseparatechamberinthesameclustertoolsystemusinghavehighopticaltransmittanceandhighconductivity.diborane(dilutedto011%inH2)asdopantgastoAp2typeμc2Si:Hlayercanbeconsideredtobe“good”preparep2typematerials.Thesilaneanddiboranecon2ifitsRamancrystallinityislargerth
7、an015andthecentrationsaredefinedasCSi=FSiH4/(FSiH4+FH2)andcorrespondingdarkconductivity(σd)atroomtemper2CB=FB2H6/FSiH4,respectively,whereFSiH4,FH2,and-1-1atureisabove1Ω·cmforathicknessof20～FB2H6representtheflowratesofSiH4,H2andB2H6.30nm.Inpractice,eventhinnerμ
