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1、SOI器件及铁电存储器特性研究AbstractWiththerapiddevelopmentofmicroelectronic,thefeaturesizeofsemiconductordevicesbecomessmaller,whichcausesmanyparasiticaleffectssuchasshortchanneleffects,latch-upeffectsandparasiticalcapacitanceeffects.TomeetthedevelopmentofIntegratedCircuit(IC),kindsofimprovedsemic
2、onductordeviceshavebeenproposed.Amongthesedevices,thereexisttwotypesemiconductordevices.Oneisthenewmaterialdevicesuchasthecompoundsemiconductordevice,phasechangedeviceandferroelectricdevice.Theotheristhenewstructuredevicessuchassilicon-on-insulator(SOI)device.Inthisdissertation,theSOId
3、eviceandferroelectricdevicearestudied.SOIdeviceshavebroadapplicationinthefieldsofmilitaryandstaerospace,andarenamedas“the21centurysilicontechnology”duetohighspeed,lowpowerdissipation,anti-radiationandexcellenthightemperatureproperties.However,thereexistmanyinnerphysicproblemswhichconst
4、rainthedevelopmentofSOIdevices.Forthesepoints,thehightemperaturecharacteristic,kinkeffects,floatingbodyeffectsandtransienteffectsarestudiedindetailinthispaperusingthetheorymodelandcomputersimulation.Ferroelectricmemorieshavebeenregardedasoneofthepotentialmemoriesduetoitsnon-volatility,
5、lowpowerconsumption,highendurance,highspeedwriting,highdensity,anti-radiationandcompatiblewithICprocess.Ferroelectricmemories(FeRAM)havewidespreadapplicationincomputer,aerospaceandmilitaryindustry.Asonetypeofferroelectricmemories,ferroelectricgatefield-effecttransistors(FETs)haveattrac
6、tedconsiderableinterestforseveraldecadesduetoitspotentiallyapplicationstononvolativememorydevices,becauseFEThasanondestructiveread-outoperation,asimpleFETstructureandobeysascaling-downrule.Thus,ferroelectricgatefield-effecttransistormemoryisanidealmemorysuitableforultimatelymemory.Inou
7、rpaper,theorymodelshavebeenproposedtostudythemetal-ferroelectric-insulator-semiconductor(MFIS)deviceand5+5+alsoV-dopedBi3.7Dy0.3Ti3O12(BDTV)andV-dopedBi3.4Yb0.6Ti3O12(BYTV)thinfilmshavebeenprepared.Theexperimentsmakeclearthattheferroelectric5+characteristiccanbeenhancedusingVionsubst
