MRF6VP11KH[1]

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1、FreescaleSemiconductorDocumentNumber:MRF6VP11KHTechnicalDataRev.7,4/2010RFPowerFieldEffectTransistorN--ChannelEnhancement--ModeLateralMOSFETMRF6VP11KHR6Designedprimarilyforpulsedwidebandapplicationswithfrequenciesupto150MHz.Deviceisunmatchedandissuitableforuseinindustrial,medicalandscienti

2、ficapplications.•TypicalPulsedPerformanceat130MHz:VDD=50Volts,IDQ=150mA,Pout=1000WattsPeak(200WAvg.),PulseWidth=100μsec,1.8--150MHz,1000W,50VDutyCycle=20%PowerGain26dBLATERALN--CHANNELDrainEfficiency71%BROADBAND•CapableofHandling10:1VSWR,@50Vdc,130MHz,1000WattsPeakRFPOWERMOSFETPowerFeature

3、s•CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParameters•CWOperationCapabilitywithAdequateCooling•QualifiedUptoaMaximumof50VDDOperation•IntegratedESDProtection•DesignedforPush--PullOperation•GreaterNegativeGate--SourceVoltageRangeforImprovedClassCOperationCASE375D--05,STYLE1•RoH

4、SCompliantNI--1230•InTapeandReel.R6Suffix=150Unitsper56mm,13inchReel.PARTISPUSH--PULLRFinA/VGSA31RFoutA/VDSARFinB/VGSB42RFoutB/VDSB(TopView)Figure1.PinConnectionsTable1.MaximumRatingsRatingSymbolValueUnitDrain--SourceVoltageVDSS--0.5,+110VdcGate--SourceVoltageVGS--6.0,+10VdcStorageTemperat

5、ureRangeTstg--65to+150°CCaseOperatingTemperatureTC150°COperatingJunctionTemperature(1,2)TJ225°CTable2.ThermalCharacteristicsCharacteristicSymbolValue(2,3)UnitThermalResistance,JunctiontoCase°C/WCaseTemperature80°C,1000WPulsed,100μsecPulseWidth,20%DutyCycleZθJC0.03CaseTemperature67°C,1000WC

6、W,100MHzRθJC0.131.ContinuoususeatmaximumtemperaturewillaffectMTTF.2.MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectSoftware&Tools/DevelopmentTools/CalculatorstoaccessMTTFcalculatorsbyproduct.3.RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freesca

7、le.com/rf.SelectDocumentation/ApplicationNotes--AN1955.©FreescaleSemiconductor,Inc.,2008--2010.Allrightsreserved.MRF6VP11KHR6RFDeviceDataFreescaleSemiconductor1Table3.ESDProtectionCharacteristicsTestMethodologyClassHumanBodyModel(perJESD22--A114)2(Minimum)Mach