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1、APPLIEDPHYSICSLETTERS90,1321112007Temperature-dependentstudyofn-ZnO/p-GaNdiodesaKuang-PoHsueh,Shou-ChienHuang,Ching-TaiLi,andYue-MingHsinDepartmentofElectricalEngineering,NationalCentralUniversity,Jhong-Li32054,TaiwanJinn-KongSheuandWei-ChihLaiInstituteofElectro-OpticalScie
2、nceandEngineering,NationalChengKungUniversity,Tainan70101,TaiwanChun-JuTunNationalSynchrotronRadiationResearchCenter,Hsinchu30076,TaiwanReceived17October2006;accepted20February2007;publishedonline28March2007Thisworkinvestigatesthetemperaturedependenceofthecurrent-voltageI-V
3、characteristicsofn-ZnO/p-GaNjunctiondiodes.Then-ZnOÞlmsweredepositedontopofthep-GaNbydcsputteringwithsubsequentannealingsat500,600,700,and800¡Cfor60s.TheHallmeasurementandthex-raydiffractionpatternaremeasuredtostudythen-ZnOÞlms.ThetemperaturesensitivitycoefÞcientsoftheI-Vchar
4、acterizationsareobtainedbydifferentsubstratetemperatures25,50,100,and150¡Candtheextractedvaluesare2.10,1.93,3.22,and1.36mV/¡Cintheforwardbiasand8.7,8.0,4.6,and2.3mV/¡Cinthereversebias,respectively.Thefabricatedn-ZnO/p-GaNdiodewithZnOannealingtemperaturesat800¡Cdemonstratesth
5、elowesttemperaturedependence.©2007AmericanInstituteofPhysics.DOI:10.1063/1.2716324GaN-basedmaterialsarethefavorablewide-band-gapAfterthep-electrodedeposition,sampleswerecleanedandmaterialswhichhavebeendevelopedonanindustrialscalepatternedwithphotoresist.Afterwardthen-ZnOÞlms
6、wereforuseinlightemittingdiodesLEDsandhighelectrondepositedbydcsputteringmethodandliftedoff.Then-ZnOmobilitytransistors.However,relativelylessworkwasre-mesasizeis150150m2.TheZnOsampleswerethenportedonGaN-basedheterojunctionbipolartransistorsannealedat500,600,700,and800¡Cfo
7、r60sinarapidHBTsbecauseagoodOhmiccontacttop-GaNisdifÞcultthermalannealingRTAsystem.Finally,Cr50nm/Au1Ð4toobtain.Toavoidthedryetching,severalmethodshave150nmwasdepositedontopoftheZnOlayerforn-type5,6beenreportedincludingbaseoremitterregrowth.Inthecontact.TheinsetinFig.1
8、showstheschematiccrosssectionemitter-regrowthtechniqueAlGaNwa
