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1、PROGRESSINPHOTOVOLTAICS:RESEARCHANDAPPLICATIONSProg.Photovolt:Res.Appl.2003;11:535541(DOI:10.1002/pip.516)ResearchSHORTCOMMUNICATIONImprovedPerformanceinZnO/CdS/CuGaSe2Thin-FilmSolarCellsz,yDavidL.Young*,JamesKeane,AnnaDuda,JehadA.M.AbuShama,CraigL.Perkins,ManuelRomeroandRommelNoufiNationalRene
2、wableEnergyLaboratory,1617ColeBovlevard.,Golden,CO80401,USAWereportthegrowthandcharacterizationofimprovedefficiencywide-bandgapZnO/CdS/CuGaSe2thin-filmsolarcells.TheCuGaSe2absorberthicknesswasintention-allydecreasedtobettermatchdepletionwidthsindicatedbydrive-levelcapacitanceprofilingdata.Atotal-
3、areaefficiencyof95%wasachievedwithafillfactorof708%andaVocof910mV.Publishedin2003byJohnWiley&Sons,Ltd.keywords:coppergalliumdiselenide;CuGaSe2;thin-filmsolarcell;solarconversioneffi-ciency;photovoltaicsINTRODUCTIONecently,improvedefficienciesforCdS/CuIn1xGaxSe2solarcellshavebeenreportedforx031
4、2(Egap11eV)compositionandforx¼0(Egap095eV)composition.Thesesuccesseshavecapi-Rtalizedoninsightsaboutgrowth-relateddefectsintheCuIn1xGaxSe2materialsystemduringathree-3stageelementalevaporationprocess.Despitethesesuccesses,higher-bandgap(Egap515eV)absorbermaterialsforsolarcellsaredesirable
5、becauseoftheirhigheropen-circuitvoltage,andlowercurrentsforbettermoduleperformanceandcurrentmatchinginatwo-terminaltandem.However,attemptstoincreasethebandgap(i.e.,increasex)intheCuIn1xGaxSe2materialsystemhaveledtolower-than-expectedopen-circuitvoltagesandlower4efficiencies.Oneofthegreatestcha
6、llengesforathin-filmtandemdeviceisraisingtheefficiencyofthewide-bandgaptop5,6solarcellfromthecurrent9%tothe16%range.TheCuIn1xGaxSe2materialsystemisoneofthelead-7ingcandidatesforatop-cellabsorberbecauseofitsidealbandgapatx¼1(17eV)andtheknowledgebaseandsuccessofthematerialatx03asasolarcella
7、bsorber.Inthisshortcommunication,wereportimprovedperformanceforawide-bandgappolycrystallineCdS/CuGaSe2(CGS)solarcellwithVoc¼0910V,FF¼708%andatotalareaefficiencyof95%.Thehighesteffi-ciencyreportedforapolycrystallinedeviceis87%(totalare
