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1、http://www.kayakumicrochem.jp/www.microchem.comSU-83000PermanentEpoxyNegativePhotoresistSU-83000isahighcontrast,epoxybasedphotoresistdesignedforApplicationsmicromachiningandothermicroelectronicapplications,whereathick,chemicallyandthermallystableimageisdesired.SU-83000isanimprovedfor
2、mulationofSU-8andSU-82000,whichhasbeenwidelyusedbyMEMSproducersformanyyears.SU-83000allowshasbeenformulatedforimprovedadhesionandreducedcoatingstress.TheviscosityrangeofSU-83000allowsforfilmthicknessesof4to120µminasinglecoat.SU-83000hasexcellentimagingcharacteristicsandiscapableofpro
3、ducingveryhigh,over5:1aspectratiostructures.SU-83000hasveryhighopticaltransmissionabove360nm,whichmakesitideallysuitedforimagingnearverticalsidewallsinverythickfilms.SU-83000isbestsuitedforpermanentapplicationswhereitisimaged,curedandleftonthedevice.FeaturesContactalignerexposure10um
4、features,50umSU-83000coating•ImprovedadhesionCoat•ReducedcoatingstressSU-83000resistsareavailableinfivestandardviscosities,shownin•HighaspectratioimagingTable1.Figure1providestheinformationrequiredtoselecttheappropriateSU-83000resistandspinconditions,toachievethe•Verticalsidewallsdes
5、iredfilmthickness.•Greaterthan100µmfilmthicknessinasinglecoatRecommendedProgram•Excellentdryetchresistance(1)Dispense1mlofresistforeachinch(25mm)ofsubstratediameter(2)Spinat500rpmfor5-10secwithaccelerationof100rpm/second(3)Spinat3000rpmfor30secwithaccelerationof300rpm/secondProcessin
6、gGuidelines110SU-83000ismostcommonlyexposedwithconventionalUV(350-400100SU-83050nm)radiation,althoughi-line(365nm)isrecommended.Itmayalso90SU-83035beexposedwithe-beamorx-rayradiation.Uponexposure,cross-SU-83025linkingproceedsintwosteps(1)formationofastrongacidduringthe80SU-83010m)exp
7、osurestep,followedby(2)acid-catalyzed,thermallydrivenepoxyµ70SU-83005cross-linkingduringthepostexposurebake(PEB)step.Anormal60processis:spincoat,softbake,expose,PEB,followedbydevelop.5040SubstratePreparationFilmThickness(30Toobtainmaximumprocessreliability,substratesshouldbeclean20an
8、ddrypriortoa
