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1、Nano-ElectronicDevicesDragicaVasileska•StephenM.GoodnickEditorsNano-ElectronicDevicesSemiclassicalandQuantumTransportModelingABCEditorsDragicaVasileskaStephenM.GoodnickSchoolofElectrical,ComputerSchoolofElectrical,ComputerandEnergyEngineeringandEnergyEngineeringArizonaStateUniversityArizonaStateU
2、niversityTempe,ArizonaTempe,ArizonaUSAUSAvasileska@asu.edustephen.goodnick@asu.eduISBN978-1-4419-8839-3e-ISBN978-1-4419-8840-9DOI10.1007/978-1-4419-8840-9SpringerNewYorkDordrechtHeidelbergLondonLibraryofCongressControlNumber:2011928232cSpringerScience+BusinessMedia,LLC2011Allrightsreserved.Thisw
3、orkmaynotbetranslatedorcopiedinwholeorinpartwithoutthewrittenpermissionofthepublisher(SpringerScience+BusinessMedia,LLC,233SpringStreet,NewYork,NY10013,USA),exceptforbriefexcerptsinconnectionwithreviewsorscholarlyanalysis.Useinconnectionwithanyformofinformationstorageandretrieval,electronicadapta
4、tion,computersoftware,orbysimilarordissimilarmethodologynowknownorhereafterdevelopedisforbidden.Theuseinthispublicationoftradenames,trademarks,servicemarks,andsimilarterms,eveniftheyarenotidentifiedassuch,isnottobetakenasanexpressionofopinionastowhetherornottheyaresubjecttoproprietaryrights.Printe
5、donacid-freepaperSpringerispartofSpringerScience+BusinessMedia(www.springer.com)PrefaceWithinthisvolume,wehaveattemptedtopresentacomprehensivepictureofthestateoftheartintransportmodelingrelevantforthesimulationofnanoscalesemiconductordevices.Atthetimeofthepublicationofthisbook,advancesincon-venti
6、onalplanarsemiconductordevicescalinghaveresultedinproductiondeviceswithgatelengthsapproaching22nanometers(atthetimeofwritingthispreface),whileresearchdeviceswithgatelengthsofjustafewnanometershavebeendemon-strated.ThesemiconductorindustryhasbeendominatedbySibasedMetalOxideSemiconductor(MOS)transi
7、storsforover40years.However,atpresent,thereisanincreasingdrivetointegrateadiversityofmaterialssuchasIII–Vcompoundchannelmaterialsandhighinsulatordielectrics,andtheintroductionofradicallynewmate-rialssuchasgraphene.Atth
