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1、SemiconductorOptoelectronicDevicesIntroductiontoPhysicsandSimulationSemiconductorOptoelectronicDevicesIntroductiontoPhysicsandSimulationJOACHIMPIPREKUniversityofCaliforniaatSantaBarbaraAmsterdamBostonLondonNewYorkOxfordParisSanDiegoSanFranciscoSingap
2、oreSydneyTokyoThisbookisprintedonacid-freepaper.Copyright2003,ElsevierScience(USA)Allrightsreserved.Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical,includingphotocopy,recordingoranyinformationstorageand
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4、ueston-lineviatheElsevierSciencehomepage(http://elsevier.com),byselectingCustomerSupportandthenObtainingPermissions.AcademicPressAnimprintofElsevierScience525BStreet,Suite1900,SanDiego,California92101-4495,USAhttp://www.academicpress.comAcademicPress
5、84TheobaldsRoad,LondonWC1X8RR,UKhttp://www.academicpress.comLibraryofCongressControlNumber:2002111026InternationalStandardBookNumber:0-12-557190-9PRINTEDINTHEUNITEDSTATESOFAMERICA0203040506987654321ToLisaContentsPrefacexiListofTablesxiiiIFundamentals
6、11IntroductiontoSemiconductors31.1Electrons,Holes,Photons,andPhonons..............31.2Fermidistributionanddensityofstates...............51.3Doping...............................72Electronenergybands132.1Fundamentals............................132.1.1
7、ElectronWaves.......................132.1.2EffectiveMassofElectronsandHoles...........162.1.3EnergyBandGap......................202.2ElectronicBandStructure:Thek·pMethod............232.2.1Two-BandModel(ZincBlende)..............242.2.2StrainEffects(
8、ZincBlende)................272.2.3Three-andFour-BandModels(ZincBlende).......302.2.4Three-BandModelforWurtziteCrystals..........322.3QuantumWells...........................392.4SemiconductorAlloys........................432.5BandOffsetatHeterointerfa
