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1、ThispageintentionallyleftblankElectronicandOptoelectronicPropertiesofSemiconductorStructurespresentstheunder-lyingphysicsbehinddevicesthatdrivetoday’stechnologies.Thebookcoversimportantdetailsofstructuralproperties,bandstructure,transport,opticalandmagneticpropertiesofsemic
2、onductorstructures.Effectsoflow-dimensionalphysicsandstrain–twoimportantdrivingforcesinmoderndevicetechnology–arealsodiscussed.Inadditiontoconven-tionalsemiconductorphysicsthebookdiscussesself-assembledstructures,mesoscopicstructuresandthedevelopingfieldofspintronics.Theboo
3、kutilizescarefullychosensolvedexamplestoconveyimportantconceptsandhasover250figuresand200homeworkexercises.Real-worldapplicationsarehighlightedthroughoutthebook,stressingthelinksbetweenphysicalprinciplesandactualdevices.ElectronicandOptoelectronicPropertiesofSemiconductorSt
4、ructuresprovidesengineeringandphysicsstudentsandpractitionerswithcompleteandcoherentcoverageofkeymodernsemiconductorconcepts.Asolutionsmanualandsetofviewgraphsforuseinlecturesisavailableforinstructors.receivedhisPh.D.fromtheUniversityofChicagoandisProfessorofEle
5、ctricalEngineeringandComputerScienceattheUniversityofMichigan,AnnArbor.HehasheldvisitingpositionsattheUniversityofCalifornia,SantaBarbaraandtheUniversityofTokyo.Heistheauthorofover250technicalpapersandofsevenprevioustextbooksonsemiconductortechnologyandappliedphysics.Electr
6、onicandOptoelectronicPropertiesofSemiconductorStructuresJaspritSinghUniversityofMichigan,AnnArborCambridge,NewYork,Melbourne,Madrid,CapeTown,Singapore,SãoPauloCambridgeUniversityPressTheEdinburghBuilding,Cambridge,UnitedKingdomPublishedintheUni
7、tedStatesofAmericabyCambridgeUniversityPress,NewYorkwww.cambridge.orgInformationonthistitle:www.cambridge.org/9780521823791©CambridgeUniversityPress2003Thisbookisincopyright.Subjecttostatutoryexceptionandtotheprovisionofrelevantcollectivelicensingagreements,noreproductionof
8、anypartmaytakeplacewithoutthewrittenpermissionofCambridgeUniversityPress.Firstpubl
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