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1、Chapter2MaterialPropertiesandTransportPhysicsAtpresent,mostpowersemiconductordevicesaremanufacturedusingsiliconasthebasematerial.Bothunipolarandbipolardeviceshavebeensuccessfullydevelopedfromsilicontoserveaverybroadrangeofapplications.Asshownintheprevio
2、uschapter,theresistanceofthedriftregioninpowerdevicescanbedrasticallyreducedbyreplacingsiliconwithwidebandgapsemiconductors.Althoughsomeeffortwasundertakeninthe1980stodeveloppowerdevicesfromgalliumarsenide,interestinthistechnologyhasdwindledbecauseitism
3、uchmorepromisingtomakethepowerdevicesfromsiliconcarbide.Forthisreason,therelevantpropertiesofsiliconcarbideareincludedwiththoseofsiliconinthischapterforthepurposesofcomparisonanddesign.Analyticalexpressionsthatcanmodelthesepropertiesareprovidedtofacilit
4、atetheanalysisofpowerdevicestructures.Althoughthefundamentalmaterialpropertiesofthesemiconductorgoverntheoperatingcharacteristicsofpowerdevices,processingtechniquesusedtocontrolthesepropertiesimposetechnologicalconstraintsthatareequallyimportantforobtai
5、ningthedesireddevicecharacteristics.Forthisreason,thechapterincludesadiscussionofcurrenttechnology,suchaneutrontransmutationdoping(NTD)forcontrollingtheresistivityandelectronirradiationforcontrollingtheminoritycarrierlifetime.Thesetechnologieshavebeensp
6、ecificallydevelopedformanufacturingpowerdevicesandarealmostexclusivelyusedforthesetypesofstructures.2.1FundamentalProperties12–4Thefundamentalpropertiesofsiliconandsiliconcarbidearesummarizedandcomparedinthissection.Onlythepropertiesforthe4Hpoly-typeofs
7、iliconcarbidehavebeenincludedherebecauseitspropertiesaresuperiortothoseoftheB.J.Baliga,FundamentalsofPowerSemiconductorDevices,doi:10.1007/978-0-387-47314-7_2,©SpringerScience+BusinessMedia,LLC200824FUNDAMENTALSOFPOWERSEMICONDUCTORDEVICESotherpoly-types
8、ofsiliconcarbide.Thebasicpropertiesofrelevancetopowerdevicesaretheenergybandgap,theimpactionizationcoefficients,thedielectricconstant,thethermalconductivity,theelectronaffinity,andthecarriermobility.Sincetheintrinsiccarrierconcen
