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1、上海交通大学硕士学位论文DEVELOPMENTANDOPTIMIZATIONOFPLASMAETCHINGFOR40NMPOLYSILICONGATEABSTRACTAsonemoduleofthestrictestrequirementsinICmanufacturingprocess,40nmgateetchingprocessfacesmanychallenges,suchasphysicalprofile,throughpitchCDbiasloading,linewidthroughnessand
2、CDuniformity.Thispaperfocusesontheabovefouraspects.Firstly,bychangingprocessintegrationingateloop,theloadingofN-dopedandP-dopedgateprofileisminimized.Duringdifferentetchingsteps,theeffectsandmechanismsofoxygen,pressure,andphysicalbombardmentarealsoinvestig
3、ated.Secondly,CDloadingofthrough-pitchisreducedbyaddingplasmatreatmentstepandbiaspower.CDvariationiscontrolledwithin2nminkeydesignpitches.Thirdly,linewidthroughnessisoptimized.Thetypeofetchinggas,plasmatreatmenttechnologyandphysicalbombardmentshowdifferent
4、effects.Finally,bytuningtemperatureandpressure,gateCDuniformityisfarbetterthanthetarget.Inthisthesis,notonlyis40nmgateetchingrecipedevelopedwhichfullymeetsrequirements,butalsomechanismofactionisproposedbasedonexperimentalresults.Itwillbehelpfulfordevelopin
5、gmoreadvancedetchprocessinfuture.KEYWORDS:40nm,gate,plasma,etchingII万方数据上海交通大学硕士学位论文目录第一章引言...................................................................................................................11.1集成电路产业发展概述....................................
6、...................................................11.2半导体集成工艺介绍...........................................................................................21.3等离子体工艺特性.........................................................................................
7、......31.4栅模块工艺发展...................................................................................................91.5研究现状及课题内容...........................................................................................9第二章40纳米栅工艺及设备......................
8、..............................................................112.140纳米栅膜层结构及工艺特点.........................................................................112.240纳米栅刻蚀设备........................................
