thz光栅结构uvliga光刻工艺研究

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1、ABSTRACTIt，sofconsiderableimportancetheapplicationsofTHzwaveincommunications，radar，probe，imagingandmore．Theorotronandbackwardwaveoscillatorwithgratingstructure，whichprovidecompact，highpower,highefficiencyandtunableproperties，possessgreatpotentialfordevelopment·MetalGrating，asthekeypartofte

2、rahertzsource，lSnotcompatiblewithtraditionalmachiningmethodsandcommonmicrofabricationmethodsduetoitssmallfeaturesize．UV-LIGAbasedonSU．8photoresistisakindofeffectiveandpracticalMEMStechnologytomeettheTHzgratingstructure’Sprocessingreauirements．AstheimportantprocedureofUV—LIGA，theeffectofpho

3、toetchingprocesshasacriticalinfluenceonthesubsequentmicro-electroformingprocess．ThispapercarriedoutresearchonprocessoftheTHzgratingstructuretosavetheproblemduringUV-LIGA．Accordingtothecharacteristicsofthephotoetchingprocess，theinfluenceofvariousprocedureonphotoetchingeffectwasanalyzed．Andw

4、eintroducedTaguchiorthogonalandonesteponefactormethodsintotheoptimizationoftheprocessingexpe血lental，Whichhadmulti．factorandmulti—levelfeatures．Firstphotoetchingprocessresearchonmonolayerfilmof94GHzand300GHzsinglegratingstructurewasinvestigated．Andtheoptimizationofpretreatmentprocedurebyexp

5、erimentswasacllieved．basedonwhichTaguchiorthogonalexperimentswereusedtofmdtheoptimalparametersofexposuretime、post—baketime，post-baketemperatureanddevelopmenttime．Meanwhilemostdecisivefactorwasacquiredbyanalyzingtheexperimentaldataandmorphologyoffilmstructure．Afterfurtheroptimization，theopt

6、imizedresultofphotoetchingprocessof94GHzand300GHzsinglegratingstllJcturewere0btained．Onmebasisofsingle—layerfilmtechnology,theexperimentalstudyofphotoetchingprocessof300GHzbi—gratingstructureofbi。layerfilmwasped．onIled．Theproblemssuchasimprovingtheflatnessofthefilmthickness，reducingmeefrec

7、tofstress，solvingthedifficultyofdevelopingliquidtransport，hadbeensolved．Finally,agoodmicromouldofbi-gratingwithsteepsidewallandsmoothsl】嘞cewasachievedbycombiningTaguchiorthogonalexperimentandonesteponefactormetllod，whichthicknessandaspectratiowere700Ⅳnand14：1，