电子技术专业英语教学课件作者何茗unit8.ppt

《电子技术专业英语教学课件作者何茗unit8.ppt》由会员上传分享，免费在线阅读，更多相关内容在教育资源-天天文库。

1、Unit8BasicProcessesinIntegratedCircuitFabricationIntroductionThetwomostprevalentintegratedcircuittechnologiesarebipolarandMOS.WithineachofthesefamiliesarevarioussubgroupsasillustratedinFigure1.8.1,whichshowsafamilytreeofsomeofthemorewidelyusedsiliconintegratedcircuittechn

2、ologies.Formanyyearsthedominantsiliconintegratedcircuittechnologywasbipolar,asevidencedbytheubiquitousmonolithicoperationalamplifierandtheTTLtransistortransistorlogicfamily.下一页返回Unit8BasicProcessesinIntegratedCircuitFabricationIntheearly1970sMOStechnologywasdemonstratedto

3、beviableintheareaofdynamicrandomaccessmemories(DRAMs),microprocessors,andthe4000serieslogicfamily.Bytheendofthe1970s,drivenbytheneedfordensity,itwasclearthatMOStechnologywouldbethevehicleforgrowthinthedigitalVLSIarea.Atthesametime,severalorganizationswereattemptinganalog

4、circuitdesignsusingMOS.NMOStechnologywastheearlytechnologyofchoiceforthemajorityofbothdigitalandanalogMOSdesigns.下一页上一页返回Unit8BasicProcessesinIntegratedCircuitFabricationTheearly1980ssawthemovementoftheVLSIworldtowardsilicongateCMOSwhichhasbeenthedominanttechnologyforVLSI

5、digitalandmixedsignaldesignseversince.Recently,processesthatcombinebothCMOSandbipolar(BiCMOS)haveproventhemselvestobebothatechnologicalandmarketsuccesswheretheprimarymarketforcehasbeenimprovedspeedfordigitalcircuits(primarilyinstaticrandomaccessmemories,SRAMs).BiCMOShaspo

6、tentialaswellinanalogdesignduetotheenhancedperformancethatabipolartransistorprovidesinthecontextofCMOStechnology.ThisbookfocusesontheuseofCMOSforanalogandmixedsignalcircuitdesign.下一页上一页返回Unit8BasicProcessesinIntegratedCircuitFabricationBasicMOSsemiconductorfabricationpro

7、cessesSemiconductortechnologyisbasedonanumberofwellestablishedprocesssteps,whicharethemeansoffabricatingsemiconductorcomponents.Inordertounderstandthefabricationprocess,itisnecessarytounderstandthesesteps.Theprocessstepsdescribedhereinclude:oxidation,diffusion,ionimplant

8、ation,deposition,andetching.Themeansofdefiningtheareaofthesemiconductorsubjecttoprocessingiscal