电子技术专业英语教学课件作者何茗unit11.ppt

《电子技术专业英语教学课件作者何茗unit11.ppt》由会员上传分享，免费在线阅读，更多相关内容在教育资源-天天文库。

1、Unit11CMOSIntegratedCircuitsTheinformationrevolutionhasbeendrivenlargelybycontinuedprogressinintegratedcircuitdevelopment.Todate,integratedcircuitshavedoubledfunctionsperchipeveryoneandahalftotwoyearssincethe1960s.Thistrend,formallyknownasMoore’slaw,haspacedthesem

2、iconductorindustry.ThemostubiquitouscircuitryusedfordigitallogicapplicationsisCMOS,thecomplementarymetaloxidesemiconductor.TheprincipalcomponentofaCMOSintegratedcircuitistheMOSFET,themetaloxidesemiconductorfieldeffecttransistor.下一页返回Unit11CMOSIntegratedCircuitsThe

3、MOSFETisthefundamentalswitchingelementusedtoproducedigitallogicinintegratedcircuits.MOSFETswitchingspeedandhencecircuitspeedincreaseswithminiaturization.Furtherimprovementincomputerhardware(i.e.,increasedspeedanddensity)requirescontinuedprogressinminiaturization.I

4、nthisunitweexaminesomeoftheboundariesthatinfluencethecontinuedminiaturizationofMOSFETdevices.下一页上一页返回Unit11CMOSIntegratedCircuitsWhyCMOS?WebeginourdiscussionwithabasicreviewoftheadvantagesofCMOScircuitry.ThefundamentalprinciplesofMOSFETdeviceperformancearereviewe

5、dinthenextsection.HerewediscussonlythatwhichisneededtounderstandwhyCMOScircuitryhasbecomeubiquitousincomputinghardware.TherearetwodifferentgeneraltypesofMOSFETdevices,n-channelandp-channelstructures.ThesedevicesaresketchedinFigure2.1.1下一页上一页返回Unit11CMOSIntegrate

6、dCircuitsThebasicideaofaMOSFETdeviceisthatagateelectrodeformedbyametaloxidesemiconductorstructurecontrolstheconductivityoftheunderlyingsemiconductorregion.Throughjudiciousselectionofthegatevoltage,aconductingchannelcanbeopenedandclosedconnectingthesourceanddrainco

7、ntactsofthedevice.Inthen-channelMOSFET,theunderlyingsemiconductormaterialisp-typeandtheconductingchannelformedbetweenthesourceanddrainregionsisn-type.Conversely,inthep-channelMOSFET,theunderlyingsemiconductormaterialisn-typewhiletheconductingchannelconnectingthes

8、ourceanddrainregionsisp-type.下一页上一页返回Unit11CMOSIntegratedCircuitsThetypicalbiasingcircuitforaMOSFETdeviceandthecorrespondingcurrentvoltagecharacteristi