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1、ARTICLESPUBLISHEDONLINE:6FEBRUARY2011
2、DOI:10.1038/NPHOTON.2010.315NanolasersgrownonsiliconRogerChen,Thai-TruongD.Tran,KarWeiNg,WaiSonKo,LinusC.Chuang,ForrestG.SedgwickandConnieChang-Hasnain*Theintegrationofopticalinterconnectswithsilicon-basedelectronicscanaddressthegrowing
3、limitationsfacingchip-scaledatatransportasmicroprocessorsbecomeprogressivelyfaster.However,untilnow,materiallatticemismatchandincompatiblegrowthtemperatureshavefundamentallylimitedmonolithicintegrationoflasersontosiliconsubstrates.Here,weuseanovelgrowthschemetoovercomethisr
4、oadblockanddirectlygrowon-chipInGaAsnanopillarlasers,demonstratingthepotencyofbottom-upnano-optoelectronicintegration.UniquehelicallypropagatingcavitymodesareusedtostronglyconfinelightwithinsubwavelengthnanopillarsdespitethelowrefractiveindexcontrastbetweenInGaAsandsilicon.T
5、hesemodesthereforeprovideanavenueforengineeringon-chipnanophotonicdevicessuchaslasers.Nanopillarlasersareas-grownonsilicon,offertinyfootprintsandscalability,andarethusparticularlysuitedtohigh-densityoptoelectronics.Theymayultimatelyformthebasisoffuturemonolithiclightsources
6、neededtobridgetheexistinggapbetweenphotonicandelectroniccircuits.incethefirstlaserdemonstratedthatstimulatedemissionpro-Wealsoshowanovelhelicallypropagatingmodecavitythatcessesinanopticalmediumcanimplementapowerful,coher-offersauniquefeedbackmechanismtoenableon-chiplaserosci
7、l-Sentlightsource1,thefieldofphotonicshaswitnessedanlation.WhereastraditionalFabry–Pe´rotmodesareinhibitedbyexplosionofapplicationsintelecommunications,lighting,displays,theinterfacebetweenInGaAsandsilicon,helicalmodescanmedicineandopticalphysics,amongothers.Theintegrationof
8、stronglylocalizelightwithinnanopillarsofevensubwavelengthphotonicandelectronicdevicestocombinetheadvantagesofdimensionswithoutlossyplasmonicormetal–opticeffects.Thesebothhassubsequentlyattractedgreatinterest.Inparticular,theinte-modesthereforeexemplifyhownovelopticalphenome
9、nainnano-grationofopticalinterconnectsontosiliconchipshasbecomecriti-structurescan
